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가변 인덕터를 이용한 밀리미터파 광대역 CMOS 360° 반사형 위상천이기
정문수(Munsu Jeong),진나현(Nahyun Jin),한건호(Geonho Han),현경석(Gyeongseok Hyeon),이옥구(Ockgoo Lee) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
This paper proposes a broadband 360°reflection type phase shifter structure suitable for phasedarray antenna systems. To address the problem of narrowband operation in the existing triple resonating load-based phase shifter, a variable inductor was applied to the reflective load structure. The proposed reflection type phase shifter consists of a 90°Lange coupler, variable inductance using a transformer, and a MOS varactor. The 90°Lange coupler was EM simulated using CMOS technology. The proposed reflection type phase shifter shows the widest FBW compared to the existing reflection type phase shifter and operates with broadband performance.
안현진(Hyunjin Ahn),손병찬(Byung Chan Son),류현식(Hyunsik Ryu),이옥구(Ockgoo Lee) 한국전자파학회 2020 한국전자파학회논문지 Vol.31 No.11
본 논문에서는 임피던스 변환율을 개선하기 위한 병렬 분할된 CMOS 점증 단권변압기를 제안한다. 또한, 이에 상응하는 확장성이 있는 CMOS 공정을 사용한 병렬 분할 기법을 사용한 모델링이 개발되었다. 제안된 병렬 분할 기법의 모델링을 사용하여 병렬 분할된 단권변압기의 정확한 성능 예측이 가능하다. 병렬 분할된 점증 단권변압기는 표준 CMOS 65 ㎚ 공정을 사용하여 제작되었다. 모델링된 결과는 측정된 결과와 우수한 일치를 보여준다. 제작된 1개/2개 병렬 분할된 CMOS 점증 단권변압기는 3 ㎓ 주파수에서 −1.21 ㏈/−1.54 ㏈의 최소삽입손실의 특성을 보이며, 50 Ω 임피던스가 9.5 Ω/6.1 Ω의 임피던스로 변환되어 보인다. In this study, a parallel-segmented complementary metal-oxide–semiconductor (CMOS) step-up autotransformer was developed to improve the impedance transformation ratio. In addition, a corresponding scalable segmentation-based model was developed on a CMOS case. The proposed segmentation-based model was used to predict the accurate performance of a parallel-segmented autotransformer. The parallel-segmented step-up autotransformer was fabricated through a standard 65 ㎚ CMOS process. The modeled results showed good agreement with the measured results. The implemented one/two parallel-segmented CMOS step-up autotransformer changed the impedance from 50 Ω to 9.5 Ω/6.1 Ω with −1.21 ㏈/−1.54 ㏈ minimum insertion loss at 3 ㎓.
180nm CMOS를 이용한 5G FR1 밴드 광대역 저잡음증폭기 설계
노태림(Taerim Noh),강동휘(Donghwi Kang),김형준(Hyungjun Kim),김수현(Suhyun Kim),이옥구(Ockgoo Lee) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
This paper presents a broadband low noise amplifier(LNA) that can be implemented as onchip in FR1 band for next-generation 5G wireless mobile communication. Broadband characteristic is obtained through dual resonance of 1st stage and inter-stage without additional inductor and capacitor and broadband high order LC output matching. In the case of double resonance, the short/open of each stage impedance changes for each frequency band and resonates. Then S(1,1) is less than -10 dB in the operating area. In the case of broadband high order LC output matching, the existing LC filter is modified to as a high order. Simulated result of the proposed LNA represents 2.38~5.12 GHz bandwidth, 26.8 dB peak gain. And Noise Figure is 0.88~2.86 dB, OP1dB is 2.95 dBm at 4.25 GHz and IIP3 is -12.1 dBm at 3.25 GHz. It was confirmed that it has a gain of more than 20 dB in the operating band of the FR1 band and operates as a broadband.