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Pt 코팅된 Si 기판에 제조한 KLN 박막의 구조적 특성
박성근,이기직,백민수,전병억,김진수,남기홍 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.5
KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.