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Body Contact된 High Resistivity PD-SOI nMOSFET의 Empirical Kink 효과 모델링
이기안(Kiahn Lee),이성현(Seonghearn Lee) 대한전자공학회 2018 전자공학회논문지 Vol.55 No.12
Body contact(BCT)된 high resistivity(HR) partially depleted(PD) silicon-on-insulator(SOI) nMOSFET의 새로운 empirical kink 효과 모델을 연구하였다. 먼저, kink 효과가 없는 I-V 측정 영역을 empirical 방정식을 통해 모델링함으로써 kink 효과가 있는 전류 영역에서 kink가 없는 non-kink I-V 곡선을 정확히 추출하였다. 이로부터 얻은 non-kink 전류와 측정 데이터의 차를 통해 kink 전류를 추출하고, 새로운 전압 종속 empirical 방정식을 curve-fitting하여 kink 전류 모델을 구축하였다. 0.25μm BCT HR PD-SOI nMOSFET의 측정 DC I-V 데이터와 모델 곡선이 0 - 2.5V 구간에서 매우 잘 일치함을 확인하여 empirical 모델의 정확성을 검증하였다. A new empirical kink effect model for body contact(BCT) high resistivity(HR) partially depleted(PD) silicon-on-insulator (SOI) nMOSFETs has been studied. First, non-kink I-V curve in the current region with kink effect were accurately extracted by modeling I-V measurement region without kink effect using an empirical equation. Next, kink current was extracted by subtracting the extracted non-kink current from measured I-V data and a new kink current model was constructed by the curve-fitting of new voltage-dependent empirical equations. The accuracy of this model was verified by observing very good agreements between measured and modeled DC I-V curve in the range of 0 - 2.5 V for 0.25μm BCT HR PD-SOI nMOSFET.
관행 및 유기재배 현미의 생리활성 성분의 함량 및 항산화활성 비교
김기안,조정용,이유석,이형재,정항연,이유건,문제학,Kim, Gee An,Cho, Jeong-Yong,Lee, You Seok,Lee, Hyoung Jae,Jeong, Hang Yeon,Lee, Yu Geon,Moon, Jae-Hak The Korean Society of Food Preservation 2017 한국식품저장유통학회지 Vol.17 No.5
The content of bioactive substances and antioxidative activity in conventionally grown brown rice (CGBR) and organically grown brown rice (OGBR) were compared. Minerals (mg/100 g) such as magnesium (OGBR, $168.59{\pm}2.62$; CGBR, $121.43{\pm}2.22$), copper (OGBR, $0.50{\pm}0.06$; CGBR, $0.41{\pm}0.05$), and manganese (OGBR, $4.70{\pm}0.04$; CGBR, $2.49{\pm}0.02$) were higher in OGBR than in CGBR (p<0.05). In addition, levels of (${\mu}g/100g$) vitamins B2 (OGBR, $27.22{\pm}2.56$; CGBR, $22.12{\pm}2.24$) and B6 (OGBR, $46.32{\pm}2.66$; CGBR, $39.91{\pm}3.32$) were higher in OGBR than in CGBR (p<0.05). The contents (mg/100 g) of ${\beta}$-sitosterol (OGBR, $27.40{\pm}2.79$; CGBR, $24.75{\pm}1.06$), total phenolic (OGBR, $6.72{\pm}0.02$; CGBR, $6.64{\pm}0.02$), and ferulic acid (OGBR, $1.75{\pm}0.45$; CGBR, $1.11{\pm}0.14$) as well as the antioxidative activity (OGBR, $53.09{\pm}1.90%$; CGBR, $48.29{\pm}3.38%$) evaluated using 1,1-diphenyl-2-picrylhydrazyl (DPPH) radical-scavenging assay were higher in OGBR than in CGBR, although no significant differences between samples were observed. In comparison to the control group, brown rice samples significantly inhibited cholesteryl ester hydroperoxide formation in rat plasma subjected to copper ion-induced lipid peroxidation. The inhibitory effect of OGBR was higher than that of CGBR. These results indicate that OGBR showed higher levels of bioactive substances and enhanced antioxidative activity than CGBR, although the differences were not statistically significant.
Fe-29%Ni-17%Co 저열팽창 합금의 열팽창 특성에 미치는 냉간 가공 및 열처리의 영향
이기안 ( Kee Ahn Lee ),권진한 ( Jin Han Gwon ),박종혁 ( Jong Hyuk Park ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.1
The changes to thermal expansion and mechanical properties by cold working were investigated in the Fe-29%Ni-17%Co (wt%) low thermal expansion alloy. The Fe-29%Ni-17%Co alloy was cold rolled gradually and prepared for plating with reduction ratios of 0%, 20%, 40%, 60%, and 80%. The effect of annealing on the property was also studied. Thermal expansion was measured from 25 ℃ to 600 ℃ using a vacuum differential dilatometer. We found that the thermal expansion coefficient (α30~400) slightly decreased (at a reduction ratio of 20%) and then remarkably increased (above reduction ratios of 40%) with increasing reduction ratios of cold rolling. The thermal expansion coefficient (α30~400) sharply decreased after heat treatment. Yield and tensile strengths continuously increased and elongation decreased by cold rolling. Microstructural observation and XRD analysis results showed that the α phase significantly increased as the reduction ratio increased. The slight decrease of the thermal expansion coefficient below a reduction ratio of 20% could be explained by the destruction of short-range ordering and decrease in grain size. The significant increase in the thermal expansion coefficient with cold rolling attributed to the appearance of the α phase. The correlation between the microstructural cause and invar effect of the low thermal expansion behavior is also discussed. (Received April 7, 2014)
Body Contact된 High Resistivity PD-SOI N-MOSFET에서 발생하는 RF Inductive 효과의 드레인 전압 종속성 분석
이기안(Kiahn Lee),이성현(Seonghearn Lee) 대한전자공학회 2021 전자공학회논문지 Vol.58 No.2
Gate 종횡비가 매우 큰 body contact(BCT) high resistivity(HR) partially depleted(PD) silicon-on-insulator(SOI) nMOSFET에서 발생되는 substrate current-induced body effect (SCBE)에 의해 고주파 S21과 S22 -parameter에 생기는 RF inductive 효과의 전압 종속 특성을 SCBE 등가회로의 주파수 종속 어드미턴스 방정식을 사용하여 물리적으로 분석하였다. 출력 negative 캐패시턴스를 시뮬레이션할 수 있는 복잡한 SCBE 모델 대신에 간단한 RLC 병렬 공진 회로로 RF inductive 효과를 모델한 후 소신호 등가회로를 사용하여 SCBE 저항, 인덕턴스와 공진주파수의 드레인 전압 종속 특성을 추출하고 검증하였다. The voltage-dependent characteristics of the RF inductive effect occurring in high-frequency S21 and S22 -parameters due to the substrate current-induced body effect (SCBE) generated in body contacted(BCT) high resistivity(HR) partially depleted(PD) silicon-on-insulator(SOI) nMOSFETs with high gate aspect ratio are physically analyzed using the frequency-dependent admittance equation of a SCBE equivalent circuit. After this inductive effect is modeled as a simple parallel RLC resonance circuit instead of the complicated SCBE model simulating the output negative capacitance, the drain voltage-dependent characteristics of the SCBE resistance, inductance and resonance frequency are extracted and verified by a small-signal equivalent circuit.