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자연산화 Al₂O₃ 장벽층을 갖는 스핀의존 터널링 접합에서 자기저항특성의 접합면적 의존성
이상석(Sang-Suk Lee),이긍원(Kungwon Rhie) 한국자기학회 2001 韓國磁氣學會誌 Vol.11 No.5
Spin dependent tunneling (SDT) junction devices of Ta/NiFe/Ta/NiFe/FeMn/NiFe/CoFe/AIOx/CoFe/NiFe/AI with in-situ naturally oxidized AI barrier were fabricated using ion beam deposition and dc sputtering in UHV chamber of 10^(-9) Torr. The maximum tunneling magnetoresistance (TMR) and the product resistance by junction (R_JA) are 16-17% and 50-60 Ωμ㎡, respectively. The values of TMR and R_JA with field annealing were slightly increased. The TMR and RA dependence versus the junction area size was observed. These results were explained by using sheet resistance effect of bottom electrode and spin channel effects.