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노승현,엄수근,최광호,강명진,김동환,황일환,서광석,이재길,변영철,차호영 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.4
We have developed a nitrogen-incorporated silicon oxide (SiOxNy) deposition process using plasma enhanced atomic layer deposition (PEALD) for the gate insulator of recessed-gate Al- GaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors. The SiOxNy film deposited on a recessed GaN surface exhibited a breakdown field of 13.2 MV/cm and a conduction band offset of 3.37 eV, which are the highest values reported for GaN MIS structures to the best of our knowledge. The fabricated normally-off transistor exhibited very promising characteristics such as a threshold voltage of 2.2 V, a maximum drain current density of 428 mA/mm, and a breakdown voltage of 928 V.
이재길,김동환,엄수근,노승현,서광석,김현섭,김형탁,차호영,변영철 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.1
The effects of post-metallization annealing (PMA) have been investigated for thermally-grown SiO2 on 4H-SiC metal-oxide-semiconductor (MOS) with a molybdenum (Mo) gate electrode. Mo is a great metal gate material for Silicon carbide (SiC) due to its high thermal budget and low thermal expansion coefficient, which allows high-temperature processing after the gate electrode formation. In this study, PMA process was carried out after Mo gate formation on thermally-grown SiO2/4H-SiC in the temperature range from 600 to 1000 °C in N2 or a forming gas ambient. The fabricated Mo/SiO2/4H-SiC MOS device annealed at 800 °C exhibited excellent interface characteristics with negligible hysteresis in comparison with as-grown or post-oxidation annealed samples.
이성웅,염동룡,안준윤,엄수근,김수동 대한안전경영과학회 2001 대한안전경영과학회 학술대회논문집 Vol.2001 No.05
Subsequently in Korea product liability has been introduced. The position of consumers for defective products have been disadvantageous. Defective products should be broght under the law. Then, while consumers would be largely protected, a producer would take the heavy responsibility by law, Therefore, a producer would not be able to take countermeasures for product liability. Object of this paper to investigate and analyze the actual state of management for product liability in advanced countries, and to join it with our quality management system.