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상온에서 증착된 IGZO 박막의 열처리 온도에 따른 특성
이석열(Seok-ryeol Lee),이경택(Kyong-taik Lee),김재열(Jae-yeal Kim),양명수(Myoung-su Yang),강인병(In-byeong Kang),이호성(Ho-seong Lee) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.4
We investigated the structural, electrical and optical characteristics of IGZO thin films deposited by a roomtemperature RF reactive magnetron sputtering. The thin films deposited were annealed for 2 hours at various temperatures of 300, 400, 500 and 600℃ and analyzed by using X-ray diffractometer, transmission electron microscopy, atomic force microscope and Hall effects measurement system. The films annealed at 600℃ were found to be crystallized and their surface roughness was decreased from 0.73 nm to 0.67 nm. According to XPS measurements, concentration of oxygen vacancies were decreased at 600℃. Optical band gap were increased to 3.31eV. The carrier concentration and Hall mobility were sharply increased at 600℃. Our results indicate that the IGZO films deposited at a room temperature can show better thin film properties through a heat treatment.
인듐과 주석막의 중간층이 ITO/Si 접촉 저항에 미치는 영향
김동환,박원규,박정호,유호진,강진모,한영건,양명수 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.5
Indium and tin layers were used as the diffusion barriers between the indium-tin oxide (ITO) and poly-Si in order to reduce the contact resistance. ITO/Si contacts should be adopted in thin-film transistor liquid crystal display (TFT LCD) for simplifying the fabrication process. For 5 ㎚ thick In and Sn layers, 10-minute annealing at 250℃ was performed to minimize the loss in the optical transmittance. With In and Sn layers, contact resistance values of 5×10^(-3) ∼ 4×10^(-3)Ω㎠ were obtained. These values were higher than those measured from the conventional ITO/Mo/Al/Si contacts (5×10^(-5) Ω㎠∼4 ×10^(-4)Ω㎠) but. lower than those obtained from ITO/Si contacts (about 1×10^(-1)Ω㎠) Sn was found to be stable after the annealing but In lost its function as a diffusion barrier by diffusion into Si.