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        ITO/PEDOT:PSS/MEH-PPV/Al 구조에서 MEH-PPV 농도에 따른 유기발광다이오드의 전기$\cdot$광학적 특성

        공수철,백인재,유재혁,임현승,장호정,장지근,Gong Su Cheol,Back In Jea,Yoo Jae Hyouk,Lim Hun Seung,Chang Ho Jung,Chang Gee Keun 한국마이크로전자및패키징학회 2005 마이크로전자 및 패키징학회지 Vol.12 No.2

        패턴화된 ITO/Glass 기판위에 정공수송층으로 PEDOT:PSS (poly(3,4-ethylenedioxythi-ophene)poly (styerne sulfolnate))를 발광층으로 MEH-PPV (poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene))을 사용하여 스핀코팅법으로 ITO/PEDOT:PSS/MEH-PPV/Al 구조의 고분자 유기전계 발광소자 (polymer light emitting diode, PLED)를 제작하였다. MEH-PPV 용액의 농도(0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$)변화를 변수로 하여 제작된 PLED소자의 전기$\cdot$광학적 특성 변화를 조사하였다. MEH-PPV의 농도가 $0.5{\~}0.9 wt\%$에서 가장 양호한 전기-광학 특성을 보여 주었다. 한편 $1.5 wt\%$의 고동도의 MEH-PPV를 갖는 PLED 소자에서는 전류와 휘도 값이 크게 감소하였다. 즉, MEH-PPV의 농도가 $0.5 wt\%$일 때 9V 전압 인가시 최고 발광 휘도와 효율은 $409 cd/m^2$와 4.90 lm/W를 각각 나타내었다. PLED 소자의 발광 스펙트럼은 $560{\~}585 nm$ 파장을 갖는 오렌지 계열의 발광을 나타내었다. In this report, Polymer light emitting diodes (PLEDs) with an ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared by spin coating method on the glass substrate patterned ITO (indium tin oxide), using PEDOT:PSS(poly(3,4=ethylenedioxythiophene):poly(styrene sulfolnate)) as the hole transfer material and MEH-PPV(poly(2-methoxy-5-(2-ethyhexoxy)-1,4-phenylenvinylene)) having a different concentration (0.1, 0.3, 0.5, 0.7, 0.9, 1.5 wt$\%$) as the emitting material. The electrical and optical properties of the prepared PLED samples were investigated. The good electrical and optical properties were observed for the PLED samples with a MEH-PPV concentration ranging from 0.5 to $0.9 wt\%$. However, the current and luminance values for PLED sample with $1.5 wt\%$ of MEH-PPV decreased greatly. The maximum luminance and light efficiency for the PLEDs with concentration of $0.5 wt\%$ MEH-PPV were $409 cd/m^2$ and 4.90 Im/W at 9 V, respectively. The emission spectrums were found to be $560{\~}585 nm$ in wavelength showing orange color.

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        ITO 투명전극의 O₂ 플라즈마 처리가 고분자 유기발광다이오드의 전기ㆍ광학적 특성에 미치는 영향

        공수철(Su Cheol Gong),백인재(In Jea Back),유재혁(Jea Huyk Yoo),임현승(Hun Sung Lim),양신혁(Sin Huyk Yang),신상배(Sang Bea Shin),신익섭(Ik Seup Shin),장지근(Gee Keun Chang),장호정(Ho Jung Chang) 한국표면공학회 2006 한국표면공학회지 Vol.39 No.3

        Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFOposs(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of O₂ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during O₂ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr O₂ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of 250 cd/m², respectively. The CIE color coordinates are ranged X = 0.13~0.18 and Y = 0.10~0.16, showing blue color. emission.

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