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고선택비 인산공정에서의 식각율 향상과 SiO<sub>2</sub> 재성장에 관한 연구
이승훈,모성원,이양호,배정현,Lee, Seunghoon,Mo, Sungwon,Lee, Yangho,Bae, JeongHyun 한국재료학회 2018 한국재료학회지 Vol.28 No.12
To improve the etch rate of $Si_3N_4$ thin film, $H_2SiF_6$ is added to increase etching rate by more than two times. $SiO_3H_2$ is gradually added to obtain a selectivity of 170: 1 at 600 ppm. Moreover, when $SiO_3H_2$ is added, the etching rate of the $SiO_2$ thin film increases in proportion to the radius of the wafer. In $Si_3N_4$ thin film, there is no difference in the etching rate according to the position. However, in the $SiO_2$ thin film, the etching rate increases in proportion to the radius. At the center of the wafer, the re-growth phenomenon is confirmed at a specific concentration or above. The difference in etch rates of $SiO_2$ thin films and the reason for regrowth at these positions are interpreted as the result of the flow rate of the chemical solution replaced with fresh solution.