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이온성 첨가제 도입을 통한 고이동도 고분자 반도체 특성 구현과 유기전계효과트랜지스터 및 유연전자회로 응용 연구
이동현,문지훈,박준구,정지윤,조일영,김동은,백강준,Lee, Dong-Hyeon,Moon, Ji-Hoon,Park, Jun-Gu,Jung, Ji Yun,Cho, Il-Young,Kim, Dong Eun,Baeg, Kang-Jun 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.3
Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.