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Characteristics of ZnO-based TFT Using La2O3 High-k Dielectrics
문연건,Sih Lee,박종완,김도현,Je-Hun Lee,정창오 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
In order to reduce the operation voltage of the ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous La2O3 high-k dielectrics. ZnO, as a channel layer, and ITO, as source/drain electrodes, are deposited by DC magnetron sputtering, and La2O3 high-k dielectrics are deposited by using electron cyclotron resonance-atomic layer deposition (ECR-ALD). The deposition conditions of the gate insulator were optimized for leakage current, breakdown field, and high device performance. ZnO-TFTs with high-k La2O3 gate insulators exhibited good performance. The average channel mobility, turn-on voltage, ratio of the on current to the off current, and subthreshold swing were 0.77 cm2/Vs, −0.8 V, 105, and 1.2 V/decade, respectively. We compared the characteristics of a device consisting of La2O3 to those of a device consisting of SiO2 to examine their potential for use as high-k dielectrics in future TFT devices. In order to reduce the operation voltage of the ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous La2O3 high-k dielectrics. ZnO, as a channel layer, and ITO, as source/drain electrodes, are deposited by DC magnetron sputtering, and La2O3 high-k dielectrics are deposited by using electron cyclotron resonance-atomic layer deposition (ECR-ALD). The deposition conditions of the gate insulator were optimized for leakage current, breakdown field, and high device performance. ZnO-TFTs with high-k La2O3 gate insulators exhibited good performance. The average channel mobility, turn-on voltage, ratio of the on current to the off current, and subthreshold swing were 0.77 cm2/Vs, −0.8 V, 105, and 1.2 V/decade, respectively. We compared the characteristics of a device consisting of La2O3 to those of a device consisting of SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.
원자층 증착법을 이용한 Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> 보호막의 수분 보호 특성
권태석,문연건,김웅선,문대용,김경택,신새영,한동석,박재근,박종완,Kwon, Tae-Suk,Moon, Yeon-Keon,Kim, Woong-Sun,Moon, Dae-Yong,Kim, Kyung-Taek,Shin, Sae-Young,Han, Dong-Suk,Park, Jae-Gun,Park, Jong-Wan 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.6
원자층 증착법(ALD: atomic layer deposition)을 이용하여 PES (poly (ether sulfon)) 기판위에 증착 온도, 플라즈마 파워에 따라 $Al_2O_3$와 $TiO_2$ 박막을 증착했다. 공정 조건에 따라 $Al_2O_3$와 $TiO_2$ 박막의 밀도, 탄소의 함유량이 달라지는 것을 알 수 있었으며, 공정 조건을 변화시켜 고밀도의 박막을 얻을 수 있었다. 플라즈마에 의한 PES 기판 손상을 막기 위해 buffer layer를 도입했으며, 또한 박막 내부 결함에 의한 수분 투과를 지연 또는 막기 위해 다층 구조를 증착했다. 이를 분석하기 위해 MOCON test를 이용해 투습률을 조사하였다. 플라스틱 기판에 다층 구조의 무기물 보호막을 적용했을 시 플라스틱 기판의 투습률 특성이 개선되었으며, 수분 투과에 대한 activation energy 또한 증가하는 것을 알 수 있었다. In this study, $Al_2O_3$ and $TiO_2$ films was deposited on to PES (poly(ethersulfon) substrate by using atomic layer deposition as functions of deposition temperature and plasma power. The density and carbon contents of $Al_2O_3$ and $TiO_2$ films was changed by varying process conditions. High density thin films was achieved through optimizing the process conditions. Buffer layer was deposited prior to the processing of upper thin films to avoid PES surface destruction during the high power plasma process and to enhances the tortuous path for water vapor permeation for the defect decoupling effect. The water vapor transmission rate by using MOCON test was investigated to analyze the effect. Water vaper permeation properties was improved by using the inorganic multi-layer passivation layer and activation energy of the water vapor permeation was increased.