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ZnO:Al 시드 막의 보론 농도가 ZnO 나노로드의 성장 및 특성에 미치는 영향
마대영(Tae-Young Ma),박기철(Ki-Cheol Park) 대한전기학회 2017 전기학회논문지 Vol.66 No.10
Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on SiO2/Si wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at 90 °C for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.
ZnO:Al 투명도전막의 열처리에 따른 전기적 및 광학적 특성
마대영(Tae Young Ma),박기철(Ki Cheol Park) 한국전기전자학회 2020 전기전자학회논문지 Vol.24 No.2
고주파 마그네트론 스퍼터링으로~500 nm 두께의 ZnO:Al막을 증착하였다. 증착된 ZnO:Al막을 100 ℃, 200 ℃, 300 ℃ 및 400 ℃에서 10시간 동안 열처리하였다. ZnO:Al막의 열처리에 따른 저항률, 캐리어 농도 및 이동도 변화를 측정하였다. XRD, FESEM 결과를 통해 열처리에 따른 ZnO:Al막의 저항률 변화 원인을 조사하였다. ZnO:Al막의 광 투과율을 측정한 후 에너지 밴드 갭, Urbach 에너지 및 굴절률을 도출하였다. ZnO:Al막의 전기적 특성 변화를 광특성과 연관지어 설명하였다. ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealed at 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variation of ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heat treatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.
마대영(Tae-Young Ma),박기철(Ki-Cheol Park) 대한전기학회 2018 전기학회논문지 Vol.67 No.6
We investigated annealing effects of seed layers on the properties of ZnO nanorods grown on the seed layers. ZnO nanorods were grown by a hydrothermal method. ~100 nm-thick ZnO films were sputtered on oxidized Si wafers and quartz as seed layers. The ZnO films were annealed at 400℃, 600℃, and 800℃, respectively. ZnO nanorods were grown at 90 °C for 3 hours in the mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine. X-ray diffraction was carried out to estimate the crystallinity and strain of ZnO films and nanorods. A field emission scanning electron microscope was employed to observe the morphology of the films and nanorods. PL(photoluminescence) measurements were conducted with 266 nm light. It was found that the annealing of seed layers increase the growth rate of nanorods, and change compressive strain of nanorods to tensile strain. The intensity of PL in the UV region reduced by using the annealed seed layers.
마대영(Tae-Young Ma) 대한전기학회 2016 전기학회논문지 Vol.65 No.11
In this study, ZnO nanorods were grown by a hydrothermal method. SiO₂/Si wafers and glass were used as substrates. ~20 nm-thick ZnO thin films were rf magnetron sputtered for seed layers. The precursor was prepared by mixing zinc nitrate hexahydrate and hexamethylenetetramine (hexamine) in DI water. The concentration of zinc nitrate hexahydrate was fixed at 0.05 mol, and that of hexamine was varied between 0 mol to 0.1 mol. The reactor containing substrates and precursor was put in an oven maintained at 90 °C for 1 h. X-ray diffraction was carried out to analyze the crystallinity of ZnO nanorods, and a field emission scanning electron microscope was employed to observe the morphology of nanorods. Transmittance and absorbance were measured by a UV-Vis spectrophotometer. Photoluminescence measurements were conducted using 266 nm light.
고습에서 열처리된 ITO 박막의 전기적 및 광학적 특성
마대영(Tae Young Ma),박기철(Ki Cheol Park) 한국전기전자학회 2021 전기전자학회논문지 Vol.25 No.1
고주파 마그네트론 스퍼터링으로 증착된 ~185 nm 두께의 ITO막을 습도 100%에서 열처리하였다. 온도 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃ 및 450 ℃에서 각각 4시간 동안 열처리하였다. 고습 열처리에 따른 저항률, 전자농도 및 이동도 변화를 조사하였다. XRD결과로 스트레스 변화를 계산하였으며, FESEM 사진을 통해 ITO막의 표면형상을 관찰하였다. 광투과율을 측정한 후 에너지 밴드 갭을 구하였으며, Burnstein-Moss 효과와 비교 및 분석하였다. The ~185 nm thick ITO films deposited by high frequency magnetron sputtering were annealed at 100% humidity. Annealing was performed at 200°C, 250°C, 300°C, 350°C, 400°C and 450°C for 4 hours, respectively. Variations in resistivity, electron concentration, and mobility by high-humidity annealing were investigated. The stress change was estimated from the XRD results, and the surface morphology of films was observed through the FESEM micrographs. After measuring the light transmittance, the energy-band-gap was obtained and analyzed with the Burnstein-Moss effect.
변위센서응용을 위한 피라미드형 실리콘 턴널링소자의 제조
마대영(Tae Young Ma),박기철(Ki Cheol Park),김정규(Jeong Gyoo Kim) 한국센서학회 2000 센서학회지 Vol.9 No.3
N/A The tunneling current is exponentially dependent on the separation gap between a pair of conductors. The detection of displacement can be, therefore, carried out by measurement of a variation in the tunneling current. In this experiment, we fabricated pyramid-type silicon tunneling devices in which a tunneling current flow between a micro-tip and Si₃N₄ thin film membrane. A MEMS process was used for the fabrication of the tunneling devices. The micro-tips were formed on Si wafers by undercutting a differently oriented square of SiO₂ with KOH. The stiffness of the Si₃N₄ films were observed and the model for the stiffness calculation, which is useful in predicting the stiffness even when the stiffness ranges beyond the scone of the normal experimental condition, was suggested.