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텅스텐의 저압화학 증착 (LPCVD) 시 기체유입량이 증착층의 선택성과 면저항에 미치는 영향
이정중,류창섭,금동화,주승기 대한금속재료학회(대한금속학회) 1989 대한금속·재료학회지 Vol.27 No.11
A hot-wall type reactor has been designed for chemical vapor deposition at low pressure(LPCVD), and deposition of W on an oxide patterned Si-wafer has been studied. Utilizing scanning electron microscope and cross-sectional transmission electron microscopy, selective deposition of W only on the exposed Si surface has been confirmed. It has been observed that the microstructure of the W-film is strongly affected by flow rates, i.e., partial pressures of reaction gases(WF_6 H₂ and Ar). Fourpoint probe measurement of the thin film showed that porosity in the LPCVD W-film is one of major causes which increases sheet resistivity of the film, and the quantity of porosity is affected by reaction species and individual flow rates.