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Nano scale PMOSFET에서 Channel Stress에 의한 DC 특성 및 Channel Back Scattering의 변화 관찰
나민기(Min-Ki Na),한인식(In-Shik Han),최원호(Won-Ho Choi),유욱상(Ook-Sang You),권혁민(Hyuk-Min Kwon),박성수,지희환(Hee-Hwan Ji),박성형(Sung-Hyung Park),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, both current and channel back scattering on under the channel stress were characterized in depth. The tensile and compressive stresses were applied to PMOSFET using with a nitride film used for the contact etch stop layer (CESL). The subthreshold slope of PMOSFET under compressive stress is smaller than that under the tensile stress, which exhibits the lower off current of compressive stress than tensile stress. Although back scattering ratio (rsat) of compressive stress was larger than tensile stress, thermal injection velocity (Vinj) of compressive stress was much larger than tensile case, which results in larger Idsat for compressive stress case. It was confirmed that the drain current of the device with an uniaxial stress has a strong dependency on the subthreshold slope and thermal injection velocity at the source side.
Nano-Scale CMOSFET에서 Contact Etch Stop Layer의 Mechanical Film Stress에 대한 소자특성 분석
나민기(Min-Ki Na),한인식(In-Shik Han),최원호(Won-Ho Choi),권혁민(Hyuk-Min Kwon),지희환(Hee-Hwan Ji),박성형(Sung-Hyung Park),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 대한전자공학회 2008 電子工學會論文誌-SD (Semiconductor and devices) Vol.45 No.4
본 논문에서는 Contact Etch Stop Layer (CESL)인 nitride film의 mechanical stress에 의해 인가되는 channel stress가 소자특성에 미치는 영향에 대해 분석하였다. 잘 알려진 바와 같이 NMOS는 tensile stress와 PMOS에서는 compressive stress가 인가되었을 경우 drain current가 증가하였으며 그 원인을 체계적으로 분석하였다. NMOS의 경우 tensile stress가 인가됨으로써 back scattering ratio (rsat)의 감소와 thermal injection velocity (Vinj)의 증가로 인해 mobility가 개선됨을 확인하였다. 또한 rsat 의 감소는 온도에 따른 mobility의 감소율이 작고, 그에 따른 mean free path ( λO)의 감소율이 작기 때문인 것으로 확인되었다. 한편 PMOS의 compressive stress 경우에는 tensile stress에 비해 온도에 따른 mobility의 감소율이 크기 때문에 channel back scattering 현상은 심해지지만 source에서의 Vinj가 큰 폭으로 증가함으로써 mobility가 개선됨을 확인 할 수 있었다. 따라서 CES-Layer에 의해 인가된 channel stress에 따른 소자 특성의 변화는 inversion layer에서의 channel back scattering 현상과 source에서의 thermal injection velocity에 매우 의존함을 알 수 있다. In this paper, the dependence of MOSFET performance on the channel stress is characterized in depth. The tensile and compressive stresses are applied to CMOSFET using a nitride film which is used for the contact etch stop layer (CESL). Drain current of NMOS and PMOS is increased by inducing tensile and compressive stress, respectively, due to the increased mobility as well known. In case of NMOS with tensile stress, both decrease of the back scattering ratio (rsat) and increase of the thermal injection velocity (Vinj) contribute the increase of mobility. It is also shown that the decrease of the rsat is due to the decrease of the mean free path (λ?). On the other hand, the mobility improvement of PMOS with compressive stress is analyzed to be only due to the so increased Vinj because the back scattering ratio is increased by the compressive stress. Therefore it was confirmed that the device performance has a strong dependency on the channel back scattering of the inversion layer and thermal injection velocity at the source side and NMOS and PMOS have different dependency on them.
Lanthanum이 혼입된 고유전 게이트 산화막에서의 온도에 따른 캐리어 이동 특성
권혁민(Hyuk-Min Kwon),최원호(Won-Ho Choi),한인식(In-Shik Han),구태규(Tae-Gyu Goo),나민기(Min-Ki Na),유욱상(Ook-Sang Yoo),이가원(Ga-Won Lee),이희덕(Hi-Deok Lee) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, we analyzed the mechanisms of gate leakage current for high performance MOSFETs with La-incorporated hafnium oxide. Barrier height and trap energy level are extracted using different temperature. The barrier height (1.115eV) of Schottky emission was similar to previously reported value and the trap energy level (1.133eV) of Frenkel-Poole emission was slightly low than reported value, which may be due to the La-incorporation.