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Heung Bae Kim(金興培),Kyung Je Kim(金炅濟) 한국육종학회 1971 한국육종학회지 Vol.3 No.2
RH-531, Ethrel, 및 Gibberellin等의 生長調節劑를 處理하여 大豆收量增加를 圖謀코져 本試驗을 實旅하였던바 株當粒數 및 莢數에 있어서 RH-531 200g 處理區가 220粒 및 132莢으로 가장 많았고 다음은 RH-531 100g 處理區와 Ethrel 1,000ppm 處理區의 順位였으며 處理別 1,000粒重은 RH-531 200g 處理區가 169g로 가장 무거웠고 다음은 RH-531 100g 處理區, Gibberellin 1,000ppm 處理區의 順位였다. 葉面積은 RH-531 200g 處理區가 株當平均 181㎠로 가장 넓었고 다음은 RH-531 100g 處理區, Gibberellin 100ppm 및 RH-531 50g 處理區의 順位였다. 大豆增收를 爲한 生長調節劑 利用에 있어서 10a當 RH-531 100~200g를 첫꽃이 開花할 무렵에 撤布하는 것이 좋을 것이다. The effect of RH-531, ethrel, and gibberellin in increasing the quantitative characters of soybean was studied. RH-531 increased the number of seeds and pods, weight of 1000 seeds and leaf size. Three different concentrations of RH-531 (50g/ 10a, 100g/10a, and 200g/l0a) was treated. RH-531 with 200g/l0a produced 266 seeds per plant while check plot produced 200 seeds. This chemical caused increased number of pods over the control. The weight of 1000 seeds was maximum at 200g/10a of RH-531. Plants treated with RH-531 200g/10a had largest leaf size among the treatments. RH-531 100g/l0a also had some effect in increasing the number of seeds and pods, weight of 1000 seeds and leaf size. Gibberellin with 100 ppm influenced on leaf size and gibberellin 1000 ppm effected in increasing the weight of 1000 seeds but next to RH-531 200g/l0a and RH-531-100/10a.
김흥배(Heung-Bae Kim),Gehard Hobler Korean Society for Precision Engineering 2007 한국정밀공학회지 Vol.24 No.8
3D nano-scale manufacturing is an important aspect of advanced manufacturing technology. A key element in ability to view, fabricate, and in some cases operate micro-devices is the availability of tightly focused particle beams, particularly of photons, electrons, and ions. The use of ions is the only way to fabricate directly micro-/ nano-scale structures. It has been utilized as a direct-write method for lithography, implantation, and milling of functional devices. The simulation of ion beam induced physical and chemical phenomena based on sound mathematical models associated with simulation methods is presented for 3D micro-/nanofabrication. The results obtained from experimental investigation and characteristics of ion beam induced direct fabrication will be discussed.
이온빔 몬테 카를로 시물레이션 프로그램 개발 및 집속 이온빔 공정 해석
김흥배(Heung-Bae Kim) Korean Society for Precision Engineering 2012 한국정밀공학회지 Vol.29 No.4
Two of fundamental approaches that can be used to understand ion-solid interaction are Monte Carlo (MC) and Molecular Dynamic (MD) simulations. For the simplicity of simulation Monte Carlo simulation method is widely preferred. In this paper, basic consideration and algorithm of Monte Carlo simulation will be presented as well as simulation results. Sputtering caused by incident ion beam will be discussed with distribution of sputtered particles and their energy distributions. Redeposition of sputtered particles that are experienced refraction at the substrate-vacuum interface additionally presented. In addition, reflection of incident ions with reflection coefficient will be presented together with spatial and energy distributions. This Monte Carlo simulation will be useful in simulating and describing ion beam related processes such as Ion beam induced deposition/etching process, local nano-scale distribution of focused ion beam implanted ions, and ion microscope imaging process etc.
전자빔 몬테 카를로 시물레이션 프로그램 개발 및 전자현미경 이미징 특성 분석
김흥배(Heung-Bae Kim) Korean Society for Precision Engineering 2012 한국정밀공학회지 Vol.29 No.5
Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.
김흥배(Heung-Bae Kim),Gerhard Hobler Korean Society for Precision Engineering 2007 한국정밀공학회지 Vol.24 No.10
Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 ㎚ and 0.8 A/㎠, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.
집속이온빔을 이용한 마이크로/나노스케일에서의 실리콘 금형 가공 특성
김흥배(Heung-Bae Kim),노상래(Sang-lai Noh) Korean Society for Precision Engineering 2011 한국정밀공학회지 Vol.28 No.8
The use of ion beams in the micro/nano scale is greatly increased by technology development. Especially, focused ion beams (FIBs) have a great potential to fabricate the device in sub micro scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the redeposition effect due to the sputtered atoms. In this research, we demonstrate a way which can be used to fabricate mold structures on a silicon substrate using FIBs. For the purpose of the demonstration, two essential subjects are necessary. One is that focused ion beam diameter as well as shape has to be measured and verified. The other one is that the accurate rotational symmetric model of ion-solid interaction has to be mathematically developed. We apply those two, measured beam diameter and mathematical model, to fabricate optical lenses mold on silicon. The characteristics of silicon mold fabrication will be discussed as well as simulation results.