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고주파 마그네트론 스퍼터링에 의해 성막된 TiO<sub>2</sub>가 도핑된 ZnO 박막의 전기적 및 광학적 특성
김화민,손선영,Kim, Hwa-Min,Sohn, Sun-Young 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.10
$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.
고주파 마그네트론 스퍼터링 방법을 사용하여 유리 기판 위에 증착된 PTFE 박막의 발수 특성
김화민,김동영,Kim, Hwa-Min,Kim, Dong-Young 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.11
The polytetrafluoroethylene (PTFE) films are deposited on glass using conventional rf-magnetron sputtering method. Their hydrophobic properties are investigated for application as an anti-fouling coating layer on the screen of displays. It is found that the hydrophobicity of PTFE films largely depends on the sputtering conditions, such as Ar gas flow and deposition time during sputtering process. These conditions are closely related to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the film thickness affects sensitively the geometrical morphology formed on surface of the rf-spluttered PTFE films. In particular, the PTFE film with 1950 nm thickness deposited for 30 minute at rf-power 50 W shows a very excellent optical transmittance of over 90% and a good anti-fouling property and a good durability.
플라스틱 기판의 Outgassing이 TCO 박막의 전기적 특성에 미치는 영향
김화민,지승훈,Kim, Hwa-Min,Ji, Seung-Hun 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.11
In this work, transparent conductive oxide(TCO) films such as $In_2O_3-SnO_2$(ITO) and $In_2O_3-ZnO$(IZO) were prepared on polyethylene naphthalene(PEN) and glass substrates by using rf-magnetron sputtering system. The TCO films deposited on PEN substrate show very poor conductivity as compared to that of the TCO films deposited on glass substrates. From the results of the residual gas analysis(RGA) test, this poor stability of plastic substrate is presumed to be caused by the deteriorated adhesion between the TCO films and the plastic substrate due to outgassing from the plastic substrate during deposition of TCO films. From our experiment, it is found that the vaporization of some defects in the plastic substrates deteriorate the adhesion of the TCO films to the plastic substrate, because the most plastic substrates containing the water vapor and/or other adsorbed particles such as organic solvents. Mixing of these gases vaporized in the sputtering process will also affect the electrical property of the deposited TCO films. Inorganic thin composite $(SiO_2)_{40}(ZnO)_{60}$ film as a gas barrier layer is coated on the PEN substrate to protecting the diffusion of vapors from the substrate, so that the TCO films with an improved quality can be obtained.
Ca Cell의 보호막으로 증착된 (SiO<sub>2</sub>)<sub>1-x</sub>(ZnO)<sub>x</sub> 무기 혼합 박막들의 투습 특성
김화민,류성원,손선영,Kim, Hwa-Min,Ryu, Sung-Won,Sohn, Sun-Young 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.3
We investigated the properties of inorganic diatomic films like silicon oxide ($SiO_2$) and zinc oxide (ZnO) and their composite films are packed as a passivation layer around Ca cells on glass substrates by using an electron-beam evaporation technique and rf-magnetron sputtering method. When these Ca cells are exposed to an ambient atmosphere, the water vapor penetrating through the passivation layers is adsorbed in the Ca cells, resulting in a gradual progress of transparency in the Ca cells, which can be represented by changes of the optical transmittance in the visible range. Compared with the saturation times for the Ca cells to become completely transparent in the atmosphere, the protection effects against permeation of water vapor are estimated for various passivation films. The thin composite films consist of$SiO_2$ and ZnO are found to show a superior protection effect from water vapor permeation compared with diatomic inorganic films like $SiO_2$ and ZnO. Also, this inorganic thin composite films are also found that their protection effect against permeation of water vapor can be significantly enhanced by choosing their suitable composition ratio and deposition method, in addition, the main factors affecting the permeation of water vapor through the oxide films are found to be the polarizability and the packing density.
RF-Magnetron Sputtering 방법을 이용해 질소분압비에 따른 금속 PCB용 AlN 절연막의 특성
김화민,박정식,김동영,배강,손선영,Kim, Hwa-Min,Park, Jeong-Sik,Kim, Dong-Young,Bae, Kang,Sohn, Sun-Young 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.10
In this investigation, the effects of $N_2/(Ar+N_2)$ gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under $N_2/(Ar+N_2)$ gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.32 nm and very dense structure. We suggest the possibilities of it's application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.
고주파 마그네트론 스퍼터링 방법을 사용하여 Al 기판위에 증착된 PTFE 박막의 초-발수에 관한 특성 연구
배강,김화민,Bae, Kang,Kim, Hwa-Min 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.1
Super-hydrophobic properties have been achieved on the rf-sputtered polytetrafluoroethylene(PTFE) films deposited on etched aluminum surfaces. The microstructural evolution created after etching has been investigated by FESEM. The water contact angle over $160^{\circ}$ can be achieved on the rf-sputtered ultra-tihn PTFE film less than 10 nm coated on aluminum surface etched with 7 wt.%, 12.5 wt.%, and 15 wt.% HCl concentration for 12 min. XPS analysis have revealed the presence of a large quantity of $-CF_3$ and $-CF_2$ groups in the rf-sputtered PTFE films that effectively can reduce the surface energy of etched aluminum. The presence of patterned morphology along with the low surface energy at the rf-sputtered PTFE coating makes the aluminum surface with high super-hydrophobic property.
마그네트론 스퍼터링 방법으로 제작된 In₂O₃-ZnO 박막의 전기적 특성에 대한 열처리 효과
김화민(Hwa-Min Kim),김종재(Jong-Jae Kim) 한국진공학회(ASCT) 2005 Applied Science and Convergence Technology Vol.14 No.4
rf 마그네트론 스퍼터링 방법을 사용하여 유리기판 위에 In₂O₃:ZnO=90:10 wt.%의 조성비를 갖는 indium-zinc-oxide(IZO) 박막을 산소분압 O₂/(Ar + O₂) = 0~10 %의 Ar 가스 분위기에서 제작하였다. IZO 박막의 면저항은 증착 시 유입되는 산소량이 증가함에 따라 현저하게 증가하는데, 순수한 Ar 가스 분위기에서 증착될 때 3.7×10-⁴Ω·㎝ 정도의 가장 낮은 비저항과 가시광 영역에서 평균 85% 이상의 투과율을 보이는 박막이 얻어진다. 600 ℃의 다양한 환경에서 열처리될 경우, 순수한 Ar 분위기에서 성막된 IZO 박막의 전기적 저항 변화는 박막 내에 포함된 In 또는 InO와 같은 금속 성분들의 결정화와 산화에 의해 설명되어 진다. 또한 IZO 박막을 공기 중에서 열처리하는 동안 400 ℃ 이상에서 현저하게 일어나는 산소 흡착과 구조 변화에 의한 전기적 특성들이 조사된다. IZO thin films are prepared on a corning 7059 glass substrate in a mixed gases of Ar+O₂ by rf-magnetron sputtering, using a powder target with a composition ratio of In₂O₃ : ZnO=90 : 10 wt.%. Their electrical sheet resistance are strongly dependent on the oxygen concentration introduced during the deposition, a minimum resistivity of 3.7×10-⁴ Ω·㎝ and an average transmittance over 85% in the visible range are obtained in a film deposited in pure Ar gas which is close to near the stoichiometry. During the heat treatment from room temperature up tp 600 ℃ in various environments, the electrical resistance changes are explained by cyrstallizations or oxidizations of In metal and InO contained in the IZO film. The electrical properties due to oxygen adsorption and phase transitions occurring at temperatures over 400 ℃ during heat treatment in air are also investigated.