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적응형 보쉬공정(Adaptive Bosch Process)을 이용한 식각된 바닥면 연구
이승용(Seung-Yong Lee),양승국(Seung-Kook Yang),김한형(Han-Hyoung Kim),유한석(Han-Suk Yoo),신상현(Sang-Hyun Sin),장동훈(Dong-Hoon Chang),이일항(El-Hang Lee),오범환(Beam-Hoan O),이승걸(Seung-Gol Lee),박세근(Se-Geun Park) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
We do not use dedicated Bosch process equipment of high cost, it is uses Bosch process that fit existent ICP(Inductively Coupled Plasma) equipment. Bosch process which is method of deep silicon etching is connected repeatedly in using SF? Plasma for etching process and using C₄F? Plasma the deposition process. However, between etching bottom layer and side wall not verticality and curved layer is formed. It is used about this curved layer phenomenon. because of considering gas fraction, temperature, substrate voltage, process time etc. It is used about this curved layer phenomenon and suggested optimum process condition. Standard process for study of process gas used SF? and Ar, and source power 600W, substrate voltage used -200V. Deposition process used C₄F? gas, and source power 600W, substrate voltage did not used. Process substrate temperature makes via 0℃ and progressed study. Through these processing condition, we manufactured mold for NIL(Nano Imprint Lithography) process.
E-ICP와 ICP를 이용한 MIS(Mo/HfO₂/Si) Capacitor의 Plasma Etching Damage 연구
유한석(Han-seok Yoo),양승국(Seung-kook Yang),김한형(Han-hyung Kim),이승용(Seung-yong Lee),신상현(Sang-Hyun Sin),박세근(Se-Geun Park) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
Characteristics of HfO₂ and Mo are compared using ICP and E-ICP. E-ICP that used axis magnetic field to ICP to improve plasma density is improved etch selectivity of Mo and HfO₂ than ICP. We analyzed plasma etching damage causing in etch process to manufacture MIS(Mo/HfO₂/Si) Capacitor - comb pattern with the same area but different periphery length. As a result, leakage current of E-ICP was larger than ICP. Through these result, E-ICP was improved selectivity of Mo and HfO₂ because axis magnetic field increased plasma density, but E-ICP had characteristics decreasing of uniformity, electron shading effect and selective increase of ion charge.