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김은동,장창리,김상철,김남균,Kim, Eun-Dong,Zhang, Changli,Kim, Sang-Cheol,Kim, Nam-Kyun 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.12
A fast switching thyristor with a superior trade-off property between the on-state voltage drop and the turn-off time could be fabricated by the proton irradiation method. After making symmetric thyristor dies with a voltage rating of 1,600 V from 350 $\mu$m thickness of 60 $\Omega$ㆍcm NTD-Si wafer and 200 $\mu$m width of n-base drift layer, the local carrier lifetime control by the proton irradiation was performed with help of the HI-13 tandem accelerator in China. The thyristor samples irradiated with 4.7 MeV proton beam showed a superior trade-off relationship of $V_{TM}$ = 1.55 V and $t_{q}$ = 15 $\mu$s attributed to a very narrow layer of short carrier lifetime(~1 $\mu$s) in the middle of its n-base drift region. To explain the small increase of $V_{TM}$ , we will introduce the effect of carrier compensation at the low carrier lifetime region by the diffusion current.ffusion current.t.