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김승렬,운동현,홍형기,권철한,이규정 ( Seung Ryeol Kim,Dong Hyun Yun,Hyung Ki Hong,Chul Han Kwon,Kyu Chung Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.6
The thick films of oxide semiconductors such as WO₃, SnO₂ and ZnO for the NO₂ detection of sub-ppm range have been prepared and their characteristics were investigated. It is showed that the optimum operating temperatures of the sensors are 300℃ and 220∼260℃ for WO₃-based and SnO₂-based thick films, and ZnO-based thick films, respectively. Since the resistance of ZnO-based thick films are extremely high($gt;l0^6Ω), the signal to noise ratio was comparatively low. In order to determine the selectivity, the films are exposed to the interfering gases such as ozone, ammonia, methane and the mixture of carbon monoxide and propane. WO₃-ZnO(3 wt.%) and SnO₂-WO₃(3 wt.%) thick film sensors show high sensitivity, good selectivity, excellent reproducibility and the linearity of NO₂ concentration versus sensor resistance. The preliminary results clearly demonstrated that the sensor can be successfully applied for the detection of NO₂ in sub-ppm range.