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MnAs Growth in Molecular Beam Epitaxy and its Magnetic Properties
김도진,Chang-Soo Kim,Hyojin Kim,Jong-Bong Park,Jong-Hoon Park,Kye-Jin Lee,Kyung-Hyun Kim,Young-Eon Ihm 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
The effect of the growth temperature on the structural and magnetic properties of MnAs has been studied. The results from x-ray diffraction, transmission electron microscopy, and magnetic property measurements consistently showed that the optimum substrate temperature for continuous epitaxial growth should be low, at around 300 $^\circ$C. The MnAs films divided into agglomerated separate grains at high substrate temperatures, with a discontinuous polycrystalline nature. The low-temperature-grown MnAs film showed a strong uniaxial magnetic anisotropy as also observed by a W-shape planar Hall resistance. This anisotropy was shown to have strong correlation with the surface reconstruction on the GaAs substrate.
김도진,C. G. Kim,C. S. Kim,D. Djayaprawira,H. Kim,H. C. Lee,J. B. Park,K. H. Kim,K. J. Lee,M. Takahashi,S. H. Yoo,Y. E. Ihm 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
We successfully grew GaN and GaMnN thin films on GaAs(100) and sapphire substrates at low temperatures using a new single GaN precursor, Et$_2$Ga(N$_3$)NH$_2$CH$_3$. The growth surface was monitored {\it in-situ} by reflection high-energy electron diffraction (RHEED). RMS roughness of the grown GaN films was about 4 nm. The structural and magnetic properties of the GaMnN films were investigated by X-ray diffraction, conductivity measurement, Hall-effect measurement, and superconducting quantum interference device measurement (SQUID). The GaMnN films revealed p-type conduction carriers. In the homogeneous GaMnN layers having no second phase peaks in XRD, the magnetization measurements showed a clear ferromagnetic hysteresis loop at 300 K with coercivity $\sim$ 100 Oe. This is the first observation of room temperature ferromagnetism in p-type GaMnN.
Magnetic Properties of Mn Doped GaN Grown Using Single GaN Precursor via Molecular Beam Epitaxy
김도진,C. X. Gao,F. C. Yu,H. J. Kim,Y. E. Ihm,M. H. Jung,Y. H. Jo,C. G. Kim,C. S. Kim 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
A series of Mn-doped GaN films are grown on sapphire by using a single GaN precursor via molecular beam epitaxy. Segregated Mn4-xGaxN precipitates with crystalline orientation appear in a homogeneous GaMnN matrix at a high doping concentration of the Mn dopant. This study investigates the magnetic properties of the films by using superconducting quantum interference devices. Temperature-dependent magnetic transitions due to Mn4-xGaxN precipitates are observed in the lm with higher Mn concentrations. The phenomena are discussed for the behavior of the non-collinear component in the magnetic structure of Mn4-xGaxN.