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Wafer Level Package Using Glass Cap and Wafer with Groove-Shaped Via
李周浩(Jooho Lee),朴海錫(Hae-Seok Park),申濟湜(Jeasik Shin),權鍾午(Jongoh Kwon),李相勳(Sanghun Lee),愼廣縡(KwangJae Shin),宋寅相(Insang Song) 대한전기학회 2007 전기학회논문지 Vol.56 No.12
In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sri eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 ㎒. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.