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TaF5를 이용하여 플라즈마 원자층증착법으로 증착한 TaN 박막 특성에 관한 연구
정회성 ( Hoi Sung Chung ),권정대 ( Jung Dae Kwon ),강상원 ( Sang Won Kang ) 대한금속재료학회 ( 구 대한금속학회 ) 2005 ELECTRONIC MATERIALS LETTERS Vol.1 No.2
The TaN thin films were deposited by Plasma Enhanced Atomic Layer Deposition (PEALD) using TaF5 and N2/H2/Ar mixed gas plasma at a temperature of 350℃. The film thickness/cycle saturated at 0.41Å/cycle with sufficient pulse time of TaF5. The resistivity of TaN thin film was 610μΩ-㎝ and the N/Ta ratio of thin films was determined to 1.17. Fluorine and hydrogen impurities didn`t detect at this saturation condition. Deposited thin films had polycrystalline cubic TaN structure and columnar structure did not appear. As the plasma time lengthened the thickness/cycle, resistivity and N/Ta ratio of TaN thin films did not saturate but linearly increase. As the increasing of the N2/H2 mixing ratio, the resistivity of TaN thin films was rapidly heightened by formation of Ta3N5 phase, but this dielectric phase could be reduced by lowering the N2/H2 mixing ratio.
RF sputter를 이용한 실리카 증착 고 내구성 반사 방지막 제조
전성권,정은욱,나종주,권정대,Jeon, Seong-Gwon,Jeong, Eun-Uk,Rha, Jong-Joo,Kwon, Jung-Dae 한국표면공학회 2019 한국표면공학회지 Vol.52 No.2
We fabricated durable anti-reflective(AR) layer with silica globular coating on polymer by two steps. Firstly, nano-protrusions of polymer were formed by plasma etching known as R.I.E(reactive ion etching) process. Secondly, silica globular coating was deposited on polymer nano-protrusions for mechanically protective and optically enhancing AR layers by RF magnetron sputter. And then durable antireflective polymers were synthesized adjusting plasma power and time, working pressures of RIE and RF sputtering processes. Consequently, we acquired the average transmission (94.10%) in the visible spectral range 400-800 nm and the durability of AR layer was verified to sustain its transmission until 5,000 numbers by rubber test at a load of 500 gf.
자장 여과 아크 이온빔 식각 공정을 이용한 WC-Co 및 SCM415 금속 소재 표면 구조 제어 연구
이승훈(Seunghun Lee),윤성환(Sung-Hwan Yoon),김도근(Do-Geun Kim),권정대(Jung-Dae Kwon),김종국(Jong-Kuk Kim) 한국표면공학회 2010 한국표면공학회지 Vol.43 No.2
The surfaces of WC-Co and SCM415 were etched to form a micro size protrusion for oil based ultra low friction applications using an ion bombardment process in a filtered vacuum arc plasma. WC-Co species showed that a self-patterned surface was available by the ion bombarding process due to the difference of sputtering yield of WC and Co. And the increasing rate of roughness was 0.6 ㎚/min at ?600 V substrate bias voltage. The increasing rate of roughness of SCM415 species was 1.5 ㎚/min at ?800 V, but the selfpatterning effect as shown in WC-Co was not appeared. When the SCM415 species pretreated by electrical discharge machining is etched, the increasing rate of roughness increased from 1.5 ㎚/min to 40 ㎚/min at ?800 V substrate bias voltage and the uniform surface treatment was available.