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ECR plasma로 전처리된 Cu seed층 위에 전해도금 된 Cu 막에 대한 Annealing의 효과
이한승,권덕렬,박현아,이종무,Lee, Han-seung,Kwon, Duk-ryel,Park, Hyun-ah,Lee, Chong-mu 한국재료학회 2003 한국재료학회지 Vol.13 No.3
Thin copper films were grown by electrodeposition on copper seed layers which were grown by sputtering of an ultra-pure copper target on tantalum nitride-coated silicon wafers and subsequently, cleaned in ECR plasma. The copper films were then subjected to ⅰ) vacuum annealing, ⅱ) rapid thermal annealing (RTA) and ⅲ) rapid thermal nitriding (RTN) at various temperatures over different periods of time. XRD, SEM, AFM and resistivity measurements were done to ascertain the optimum heat treatment condition for obtaining film with minimum resistivity, predominantly (111)-oriented and smoother surface morphology. The as-deposited film has a resistivity of ∼6.3 $\mu$$\Omega$-cm and a relatively small intensity ratio of (111) and (200) peaks. With heat treatment, the resistivity decreases and the (111) peak becomes dominant, along with improved smoothness of the copper film. The optimum condition (with a resistivity of 1.98 $\mu$$\Omega$-cm) is suggested as the rapid thermal nitriding at 400oC for 120 sec.
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ALD법으로 제조된 Al<sub>2</sub>O<sub>3</sub> 박막의 물리적 특성
김재범,권덕렬,오기영,이종무,Kim, Jae-Bum,Kwon, Duk-Ryel,Oh, Ki-Young,Lee, Chong-Mu 한국재료학회 2002 한국재료학회지 Vol.12 No.6
$Al_2O_3$ is a promising gate dielectric because of its high dielectric constant, high resistivity and low leakage current. Since $OH^-$ radical in $Al_2O_3$ films deposited by ALD using TMA and $H_2O$ degrades the good properties of $Al_2O_3$, TMA and $O_3$ were used to deposite $Al_2O_3$ films and the effects of $O_3$ on the properties of the $Al_2O_3$ films were investigated. The growth rate of the $Al_2O_3$ film under the optimum condition was 0.85 $\AA$/cycle. According to the XPS analysis results the $OH^-$ concentration in the $Al_2O_3$ film deposited using $O_3$ is lower than that using $H_2O$. RBS analysis results indicate the chemical formula of the film is $Al_{2.2}O_{2.8}$. The carbon concentration in the film detected by AES is under 1 at%. SEM observation confirms that the step coverage of the $Al_2O_3$ film deposited by ALD using $O_3$ is nearly 100%.
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김재범(Jaebum Kim),권덕렬(Duk-Ryel Kwon),오기영(Ki-Young Oh),이종무(Chongmu Lee) 한국진공학회(ASCT) 2002 Applied Science and Convergence Technology Vol.11 No.3
지금까지 주로 사용해 오던 TMA(trimethylaluminum, Al(CH₃)₃)와 H₂O를 사용하여 ALD(Atomic Layer Deposition)법으로 증착시킨 Al₂O₃막내의 OH^-기는 Al₂O₃의 우수한 물성을 악화시키는 불순물 역할을 하므로, 이를 개선하기 위하여 본 연구에서는 TMA 와 오존(ozone, O₃)을 이용하여 Al₂O₃막을 증착한 후, 산화제 소스로 H₂O와 O₃을 각각 사용했을 때 그것들이 Al₂O₃막의 유전적 특성에 끼치는 효과에 관하여 비교 조사하였다. XPS 분석결과 O₃를 사용한 Al₂O₃막은 H₂O를 사용할 때와는 다르게 OH^-기가 감소됨을 관찰할 수 있었다. 화학적 안정성(chemical inertness)의 척도가 되는 wet 에칭율 또한 O₃를 사용한 Al₂O₃막의 경우가 더욱 우수하게 나타났다. TiN을 상부전극으로 한 MIS (metal-insulator-silicon) capacitor 구조로 제작된 Al₂O₃막의 경우 H₂O를 사용한 경우 보다 O₃를 사용한 경우에 누설전류밀도가 더 낮았고, 절연특성이 더 우수하였으며, H₂O보다 O₃를 사용했을 때 C-V 전기적이력(hystersis) 곡선의 편차(deviation)가 감소하는 것으로 보아 전기적특성이 더 향상되었음을 알 수 있었다. In the present study Al₂O₃ films were deposited by the ALD technique using trimethylaluminum(TMA) and ozone to improve the quality of the Al₂O₃ films, since the OH^- radicals existing in the Al₂O₃ films deposited using TMA and H₂O degrade the physical and the dielectric properties of the Al₂O₃ film. The XPS analysis results indicate that the OH^- radical concentration in the Al₂O₃ film deposited using O₃ is lower than that using H₂O. The etch rate of the Al₂O₃ film deposited using O₃ is also lower than that using H₂O, suggesting that the chemical inertness of the former is better than the latter. The MIS capacitor fabricated with the TiN conductor and the Al₂O₃ dielectrics formed using O₃ offers lower leakage current, better insulating property and smaller flat band voltage shift (?VFB).
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다공성 실리콘위에 rf-스퍼터링법으로 증착된 ITO 박막의 구조적 물리적 특성
홍광표,권덕렬,박현아,이종무 대한금속재료학회 2003 대한금속·재료학회지 Vol.41 No.6
Transparent conducting indium tin oxide (ITO) films are deposited by rf-sputtering at a constant power of 400W in Ar atmosphere on the porous silicon (PS) layers anodized on p-type (100) Si wafers. At three successive stages of deposition for 10, 20 and 30 min. respectively, the growth of ITO on PS is thoroughly investigated by AFM, SEM and XRD techniques. The features of growth on other substrates like single crystal p-type (100) silicon, quartz and glass are also taken into consideration. The influence of ITO microstructure on the porous silicon interface is correlated with the electrical and luminescent behavior of the resulting heterojunction diode structure.
ScienceON
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