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Resistive Switching and Transport Characteristics of Cu/a-Si/Si Devices
강보수,차동재,이성주,나상철,김동욱 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.5
We prepared Cu/amorphous silicon (a-Si)/Si structures with active device diameters of 5, 10, and 20 μm. The Cu/a-Si/Si devices showed bipolar resistive switching (RS) behaviors and the ON/OFF ratio was larger than 10^6. In the low-resistance state (LRS), the current-voltage (I-V) curves of the 10- and 20-μm-sized devices were linear. In contrast, the LRS I-V curves for the 5-μm-sized devices were symmetric and nonlinear, which could be explained by tunnelling conduction. The Cu/a-Si/Si devices consist of materials compatible with conventional CMOS processes and can be candidates for nonvolatile memory devices.
Optical, Electrical, and Structural Properties of Ultrathin Zirconium-oxide Films
이승조,강보수,이상역,정희준,송철기,안일신 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.61
Zirconium oxide (ZrO2) is one of the candidate materials for the high-k dielectrics used in Dynamic random access memory (DRAM) devices. ZrO2 films in device structures are extremely thin, and their physical properties are highly sensitive to the preparation conditions. Thus, it is very important to monitor the properties of ZrO2 films during device fabrication. We investigated the optical, electrical and structural properties of ultrathin ZrO2 films with different thicknesses by various techniques, including vacuum UV spectroscopic ellipsometry. Particularly, the effects of annealing were studied in detail. The optical and the structural properties of thin (<4 nm) ZrO2 film did not show any significant change upon annealing. Meanwhile, thicker films (>4 nm) were crystallized, and the threshold temperature for crystallization depended on thickness. That is, thicker films crystallized at lower temperatures.