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Electron Holography of Advanced Nanomaterials
Shindo, D.,Park, H.S.,Kim, J.J.,Oikawa, T.,Tomita, T. Korean Society of Electron Microscopy 2006 Applied microscopy Vol.36 No.2
By utilizing a field emission gun and a biprism installed on a transmission electron microscope (TEM), electron holography is extensively carried out to visualize the electric and magnetic fields of nanomaterials. In the electric field analysis, the distribution of electric potential in a sharp tip made of W coated with $ZrO_2$ is visualized by applying the voltage to the tip. Denser contour lines due to the electric potential are observed with an increase in the bias voltage. In the magnetic field analysis by producing the strong magnetic field with a sharp magnetic needle made of a permanent magnet, the in situ experiment is carried out to investigate the magnetization of hard magnetic materials. The results of these experiments clearly demonstrate that electron holography is a promising advanced transmission electron microscopy technique to characterize the electric and magnetic properties of nanomaterials.
Quantitative Electron Holographic Analysis of Electric Potential Distribution around FEG-Emitters
Kim, J. J.,Xia, W. X.,Shindo, D.,Oikawa, T.,Tomita, T. The Japan Institute of Metals 2007 Materials Transactions Vol.48 No.10
<P>By means of electron holography, the electric potential distributions around a cold-type FEG-emitter (field emission gun emitter) are visualized with a change in the applied voltages. In a biased FEG-emitter, the experimental method for obtaining an unperturbed reference wave is applied in order to carry out quantitative electron holographic analyses. Further, through comparing the experimental results obtained by electron holography with those of the simulations taking into account the three dimensional configurations of the FEG-emitter and the anode, it is found that the experimental technique presented in this study is quite useful in obtaining the quantitative information regarding the electric field distribution around a biased FEG-emitter.</P>
B. H. KOO,C. G. LEE,D. SHINDO,H. MAKINO,J. H. CHANG,T. YAO,T. HANADA,Y.-G. PARK 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
The effect of growth interruption (GI) on the structural and optical properties of InAs nanostructures was investigated by transmission electron microscopy (TEM) and photoluminescence (PL). By introducing the GI, a single PL peak changed to a distinctive multiple-peak feature with average full width at half maximum 30 meV, which shows the state lling of the several low energy peaks. In conjunction with the TEM results, the changes in the PL spectra due to GI are most probably correlated with the formation of different-height islands isolated from neighbor islands due to a 2D-3D transition of the InAs layer during the GI.
본흔 구,C.-G. Lee,D. Shindo,H. Makino,J. H. Chang,J. H. Lee,T. Yao,T. Hanada,Y. D. Kim,Y.-G. Park 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
InAs quantum dots (QDs) on In$_{0.52}$Al$_{0.48}$As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 $\mu$m) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed $\sim$0.8 eV ($\sim$1.55 $\mu$m) emission from dislocation-free InAs QDs with height of $\sim$3.6 nm and base width of $\sim$20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.