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Synchrotron Radiation Induced Photochemical Reactions for Semiconductor Processes
Shi-Woo Rhee 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.2
Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes, i,e., deposition, etching, and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be evaporated by SR irradiation, which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.
CHEMICAL VAPOR DEPOSITION OF ALUMINUM FOR ULSI APPLICATIONS
Rhee, Shi Woo 한국화학공학회 1995 Korean Journal of Chemical Engineering Vol.12 No.1
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for A1 has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alane compounds, and reaction mechanisms of these precursors in A1 CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. In addition to thermal reactions, plasma and photochemical reactions are also briefly described.
Synchrotron Radiation Induced Photochemical Reactions for Semiconductor Processes
Rhee, Shi-Woo The Korean Vacuum Society 1994 Applied Science and Convergence Technology Vol.3 No.2
Valence or core electron excitations induced by Synchrotron radiation (SR) irradiation and ensuing chemical reactions can be applied for semiconductor processes i, e, deposition etching and modifications of thin film materials. Unique selectivity can be achieved by this photochemical reactions in deposition and etching. Some materials can be ecvaporated by SR irradiation which can be utilized for low temperature surface cleaning of thin films. Also SR irradiation significantly lowers the reaction temperature and photon activated surface reactions can be utilized for direct writing or projection lithography of electronic materials. This technique is especially effective in making nanoscale feature size with abrupt and well defined interfaces for next generation electronic devices.
Chemical Vapor Deposition of Aluminum for ULSI Applications
Rhee, Shi Woo 한국화학공학회 1995 NICE Vol.13 No.2
Aluminum has been used widely as a conducting material in the fabrication of integrated circuits, and chemical vapor deposition process for Al has been actively investigated for the application in ultra large scale integration. In this review, various precursors, mainly alkyl aluminum and alone compounds, and reaction. mechanisms of these precursors in Al CVD are described. Epitaxial growth and selectivity of the deposition are also discussed. in addition to thermal reactions, plasma and photochemical reactions are also briefly described.
Metal–semiconductor contact in organic thin film transistors
Rhee, Shi-Woo,Yun, Dong-Jin Royal Society of Chemistry 2008 Journal of materials chemistry Vol.18 No.45
<P>Optimization of the interface between the source/drain electrode and the organic semiconductor is one of the important factors for organic thin film transistor (OTFT) performance along with the insulator–semiconductor interface. In this Feature Article, items needed for the optimization of the metal–semiconductor interface and methods to measure interface properties are reviewed. Various electrode materials are compared in terms of the work function, contact resistance and the pentacene OTFT performance. The effect of surface modification is also discussed. Experimental data obtained in LAMP is introduced to show the effect of the various material properties more clearly.</P> <P>Graphic Abstract</P><P>The interface between the source/drain electrode and the organic semiconductor is important along with the insulator–semiconductor interface. In this Feature Article, the electrode material–pentacene interface is discussed. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b805884a'> </P>
솔 - 젤법에 의한 석영유리의 제조 : 1. 초음파를 이용한 젤의 제조 1 . Manufacture of Sonogels
이시우,임재곤,고영표,이건홍 한국화학공학회 1992 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.30 No.6
초음파를 사용한 2단계 솔-젤 공정을 사용하여 젤을 제조하고, 공정 변수들이 젤화시간 및 젤의 미세구조에 미치는 영향들을 조사하였다. 본 연구에서 얻어진 최적조건은 다음과 같다 : pH 2.7로 유지된 TEOS 1몰과 H₂O 10몰의 혼합용액에 500 J/ml의 초음파를 10분간 가한 후, NH₄OH를 첨가하여 pH 4.7로 만들어 주어 약 6분만에 균일하고 투명한 젤을 얻었다. pH의 편차가 지나치게 클 때에는 촉매의 편재에 의하여 젤에 균열이 발생하였다. 중합반응의 pH가 증가하면 젤화시간은 감소하며, pH 5.4 이상에서는 10초 이하의 젤화시간이 관찰되었다. H₂O와 TEOS의 몰비가 10이 될 때까지는 절화시간이 감소하나, 그 이상에서는 희석효과에 의하여 젤화시간이 증가하였다. 초음파에너지의 증가는 젤의 입자와 평균기공의 크기를 감소시켰다. Sonogel은 normal gel보다 입자 및 기공의 크기가 작으며, 좁은 기공크기 분포를 나타내었다. 증발건조는 부피의 감소와 미세구조의 변화를 수반하는데 반하여, 초임계건조는 wet젤의 구조를 유지하며 건조할 수 있게 하므로 wet젤의 미세구조 관찰을 위해서는 초임계 건조된 샘플을 사용하여야 한다. Gels were manufactured by the 2-step sol-gel process with ultrasonic wave mixing. The effects of process variables on the gelation time and the microstructure of gels were investigated. The optimum process conditions obtained were : solution of 1 mole TEOS and 10 mole H₂O, hydrolysis pH=2.7, condensation pH=4.7, ultrasonic energy=500 J/ml, ultrasonic mixing time of 10 minutes, and gelation time of 6 minutes. Cracks on the gels occured when the difference on pHs of hydrolysis and condensation steps was too large due to the localization of catalysts. Increase of the pH in condensation step decreased the gelation time, and less than 10 seconds of gelation time was observed above pH 5.4. The gelation time decreased up to 10 of H₂O/TEOS mole ratio, but it increased thereafter due to the dilution effect of water. The increase of ultrasonic energy reduced the size of particles and pores in the gel. Compared with normal gels, sonogels had smaller particles, smaller average pore size, and narrower pore size distribution. Since supercritical drying retains the microstructure of wet gels while evaporation drying significant changes the volume and microstructure of them, supercritically dried samples are recommended for observation of microstructures of wet gels.