http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Flexible Organic LED and Organic Thin-Film Transistor
Zyung, T.,Seong Hyun Kim,Hye Yong Chu,Jung Hun Lee,Sang Chul Lim,Jeong-Ik Lee,Jiyoung Oh IEEE 2005 Proceedings of the IEEE Vol.93 No.7
<P>In this paper, a plastic organic thin-film transistor (OTFT) with high mobility formed on the polymeric gate dielectrics is presented. Flexible organic LEDs (OLEDs) operated by an OTFT are fabricated with a novel lamination method and the results are also presented. Fabrication method and the performances of white (consisting of R, G, and B) OLEDs with high efficiency, stability, and good color purity are discussed.</P>
Electroluminescent Devices Using a Polymer of Regulated Conjugation Length and a Polymer Blend
Zyung, Tae-Hyoung,Jung, Sang-Don Electronics and Telecommunications Research Instit 1996 ETRI Journal Vol.18 No.3
A blue light emitting device has been successfully fabricated using a polymer with regulated conjugation length containing trimethylsilyl substituted phenylenevinylene units. Electroluminescence from the device has an emission maximum at 470 nm. The device shows typical diode characteristics with operating voltage of 20 V and the light becomes visible at a current density of less than $0.5;mA/cm^2$. The electroluminescence spectrum is virtually identical with the photoluminescence spectrum, indicating that the radiation mechanisms are the same for both. A light emitting device using the blend of a large band gap polymer and a small band gap polymer was also fabricated. Light emission from the small band gap polymer shows much improved quantum efficiency, but there is no light emission from the large band gap polymer. Quantum efficiency of the blend increases up to about two orders of magnitude greater than that of the small band gap polymer with increasing proportion of the large band gap polymer. The improvement in quantum efficiency is interpreted in terms of exciton transfer and the hole blocking behaviour of the large band gap polymer. Finally, we have fabricated a patterned flexible light emitting device using the high quantum efficiency polymer blend system.
Novel Method for Combining Flexible Organic Light-Emitting Diodes with Organic Thin-Film Transistors
Taehyoung Zyung,Hye Yong Chu,Jeong-Ik Lee,Ji Young Oh,Jung Hun Lee,Sang Chul Lim,Seong Hyun Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
We present a new method of driving an organic light-emitting diode (OLED) with an organic thin-film transistor (OTFT). The OTFT and the OLED were fabricated on separate plastic substrates and both devices were laminated with silver paste. After driving a 2 × 2 mm2 OLED with an OTFT device, we obtained 180 cd/m2 at a current density of 5 mA/cm2 from the green OLED by using an OTFT with mobility, on-off ratio, threshold voltage, and subthreshold slope of 0.21 cm2/V·s, 103, 32 V, and 20 V/decade, respectively.
AlxGa₁-xAs / AlAs / GaAs계로 이루어진 비대칭 이중 양자우물 구조에서의 광 Luminescence 특성 연구
정태형(Taehyoung Zyung),강태종(Tai-Jong Kang),이종태(Seon-Kyu Han),한선규(Jong-Tai Lee),유병수(Byueng-Su Yoo),이해권(Hae-Kwon Lee),이정희(Jung-Hee Lee),이민영(Min-Yung Lee),김동호(Dong-Ho Kim),임영안(Young-Ahn Leem),우종천(Jong-Chun 한국광학회 1992 한국광학회지 Vol.3 No.3
AlxGa_(1-x)As/AlAs/GaAs계로 이루어진 비대칭 이중 양자우물 구조의 광학적 특성을 photoluminescence, photoluminescence excitation, time-resolved photoluminescence를 통하여 조사하였다. 양자장벽 AlAs의 두께에 따른 특성 변화를 조사하기 위하여 두께를 15Å, 150Å로 제작하였다. 양자장벽이 15Å인 경우 매우 빠른 전자의 관통 현상을 보여 주었으며, 이로 인해 AlxGa_(1-x)As의 여기자 재결합에 해당하는 피크가 관찰되지 않았다. AlAs 양자장벽이 150Å인 경우에는 AlxGa_(1-x)As 양자우물에서 여기자 재결합에 의한 피크가 50 ㎰ 이하로 빠른 decay 시간을 보여 주었으며 이것은 양자장벽과의 Γ-X전이에 의한 것으로 사료되었다. GaAs 양자우물에서의 luminescence decay는 두 시료 모두 1 ㎱정도 이었으나, 15Å인 경우에는 약 100 ㎰의 rise 시간이 존재하였으며 이것은 정공의 관통에 의한 시간으로 판명되었다. Luminescence properties of asymmetric double quantum well structure composed of AlxGa_(1-x)As/AlAs/GaAs have been studied by steady state and time-resolved photoluminescence and phtoluminescence excitation spectroscopy at low temperature. Two quantum well samples with different barrier thickness (15Å and 15Å) were prepared to investigate the dependence of tunneling characteristics on barrier thickness. The abscence of excitonic recombination peak from AlxGa_(1-x)As wen for the 15Å barrier sample indicates a very fast electron tunneling to GaAs well. Meanwhile, Γ-X transition between wen and barrier is supposed to be a major route for the fast decay of luminescence from AlxGa_(1-x)As wen in the 150Å barrier sample. Time-resolved photoluminescence from GaAs wen of 15Å sample shows the exsitence of the rise with 100 ps which is attributed to the hole tunneling.
PHOTOBLEACHING FOR THE FORMATION OF NONLINEAR OPTICAL POLYMER WAVEGUIDE DEVICES
Kim, Jang Joo,Zyung, Taehyoung,Hwang, Wol Yon,Oh, Min Cheol 한국화학공학회 1996 Korean Journal of Chemical Engineering Vol.13 No.2
A simple but realistic kinetic model has been developed to delineate the refractive index profiles formed by photochemical reaction in nonlinear optical polymers. The effects of the absorption due to the unconverted reactant and the photoproduct are included in the model. The parameters required in the model are obtained from simple transmission experiments. The experimental results are consistent with the model. The refractive index profile is steeper when nonlinear optical polymeric materials are bleached by light with higher absorption. The rate of the bleach depth change becomes slower as the bleaching proceeds. Small absorption of bleaching light due to the photoproduct has significant effect on the resulting refractive index profiles. The photobleaching process is shown to be accelerated by the addition of a photosensitizer. Photobleaching time has been effectively reduced by a factor of 3-5. Linear and nonlinear optical properties of the polymer were little affected by the addition of the photosensitizer. It has also been demonstrated that the photobleaching technique can be utilized to tune the initial state of a directional coupler switch after completing the fabrication of the device. It was shown that successive cross states are passed from the initial cross state by selective bleaching of the gap region. The evolution of the refractive index profiles is successfully applied to predict the evolution of output state.
Photobleaching for the Formation of Nonlinear Optical Polymer Waveguide Devices
Kim, Jang Joo,Zyung, Taehyoung,Hwang, Wol Yon,Oh, Min Cheol 한국화학공학회 1996 NICE Vol.14 No.3
A simple but realistic kinetic model has been developed to delineate the refractive index profiles formed by photochemical reaction in nonlinear optical polymers. The effects of the absorption due to the unconverted reactant and the photoproduct are included in the model. The parameters required in the model are obtained from simple transmission experiments. The experimental results are consistent with the model. The refractive index profile is steeper when nonlinear optical polymeric materials are bleached by light with higher absorption. The rate of the bleach depth change becomes slower cs the bleaching proceeds. Small absorption of bleaching light due to the photoproduct has significant effect on the resulting refractive index profiles. The photobleaching process is showen to be accelerated by the addition of a photosensitizer. Photobleaching time has been effectively reduced by a factor of 3--5. Linear and nonlinea.r optical properties of the polymer were little affected try the addition of the photosensitizer. It has also been demonstrated that the photobleaching technique can be utilized to tune the initial state of a directional coupler switch after completing the fabrication of the device. It was shown that successive cross states are passed from the initial cross state by selective bleaching of the gap region. The evolution of the refractive index profiles is successfully applied to predict the evolution of output state.