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HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE
YANGYANG WANG,JIAXIN ZHENG,ZEYUAN NI,RUIXIANG FEI,QIHANG LIU,RUGE QUHE,CHENGYONG XU 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2012 NANO Vol.7 No.5
By using first-principles calculations, we predict that an in-plane homogenous electrical ¯eld can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated ¯nite ZSiNR device reveals a nearly perfect spin-¯lter e±ciency (SFE)of up to 99% while a quadruple-gated ¯nite ZSiNR device serves as an effective spin ¯eld e®ect transistor (FET) with an on/o® current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.