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Efficient metaheuristic-retrofitted techniques for concrete slump simulation
Yinghao Zhao,Chengzong Bai,Chengyong Xu,Loke Kok Foong 국제구조공학회 2021 Smart Structures and Systems, An International Jou Vol.27 No.5
Due to the benefits of the early prediction of concrete slump, introducing an efficient model for this purpose is of great importance. Considering this motivation, four strong metaheuristic algorithms, namely electromagnetic field optimization (EFO), water cycle algorithm (WCA), teaching-learning-based optimization (TLBO), and multi-tracker optimization algorithm (MTOA) are used to supervise a neural predictive system in analyzing the slump pattern. This supervision protects the network against computational issues like pre-mature convergence. The overall results (e.g., Pearson correlation indicator larger than 0.839 and 0.807 for the training and testing data, respectively) revealed the competency of the proposed models. However, investigating the rankings of the models pointed out the superiority of the WCA (MAE<sub>train</sub> = 3.3080 vs. 3.7821, 3.5782, and 3.6851; and MAE<sub>test</sub> = 3.8443 vs. 4.0326, 4.1417, and 4.0871 obtained for the EFO, TLBO, and MTOA, respectively). Moreover, the high efficiency of the EFO in terms of model complexity and convergence rate, as well as the adequate accuracy of prediction, demonstrated the suitability of the corresponding ensemble. Therefore, the neural systems trained by these two algorithms (i.e., the WCA and EFO) are efficient slump evaluative models and can give an optimal design of the concrete mixture for any desirable slump.
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HALF-METALLIC SILICENE AND GERMANENE NANORIBBONS: TOWARDS HIGH-PERFORMANCE SPINTRONICS DEVICE
YANGYANG WANG,JIAXIN ZHENG,ZEYUAN NI,RUIXIANG FEI,QIHANG LIU,RUGE QUHE,CHENGYONG XU 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2012 NANO Vol.7 No.5
By using first-principles calculations, we predict that an in-plane homogenous electrical ¯eld can induce half-metallicity in hydrogen-terminated zigzag silicene and germanene nanoribbons (ZSiNRs and ZGeNRs). A dual-gated ¯nite ZSiNR device reveals a nearly perfect spin-¯lter e±ciency (SFE)of up to 99% while a quadruple-gated ¯nite ZSiNR device serves as an effective spin ¯eld e®ect transistor (FET) with an on/o® current ratio of over 100 from ab initio quantum transport simulation. This discovery opens up novel prospect of silicene and germanene in spintronics.
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