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조기량,조의주,박영창 여수대학교 1999 論文集 Vol.14 No.2
In this paper. We tried signal analysis and noise cancelling from signal that involved random noise. Also, make a program that can be not only signal analysis for the involved noise signal but also noise cancelling . The result shows a noise cancelling ability of 23.14(dB)(LPF), 23.23(dB)(BPF) from noisy signal. Numerical simulations were carried out by a PC(Pentium-Ⅱ, 400MHz, RAM 32Mbyte) and double precision in numerical calculation.
Cu(Mg) 박막의 Time Dependent Dielectric Breakdown 특성 평가
안정욱,황상수,박영배,주영창 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2
Electrical properties and time dependent dielectric breakdown (TDDB) characteristics of Cu (0.7 at.% Mg) alloy films are investigated to improve the reliability of Cu interconnects used in microelectronic devices. After Cu(Mg) films are annealed in vacuum at 400℃ for 30 min, resistivity decreases from 3.4 to 2.0 μΩcm and, thin and continuous MgO layers form both on Cu(Mg) film surface and on Cu(Mg)/SiO₂ interface. Metal-Oxide-Silicon (MOS) capacitors composed of Cu(Mg) film deposited on thermal oxide grown on Si wafer are subjected to bias temperature stressing at 180 through 220℃ under electric fields of 1.5 through 2.6 MV/cm. Median time to failure (MTTF) and activation energy of Cu(Mg)/SiO₂ are much larger than those of pure Cu/SiO₂. Cu drifts into dielectric are inhibited by the continuous Mg oxide formed at Cu(Mg)/SiO₂ interface which improve interfacial adhesion and finally lead to better interconnect reliabilities. (Received October 29, 2004)