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미세 전기기계 시스템용 알루미늄 박막의 탄성계수 및 항복강도 평가
주영창,손동일,관동일 대한금속재료학회(대한금속학회) 2001 대한금속·재료학회지 Vol.39 No.3
Nowadays, the aluminum films have wide application in micromechanical devices such as micro sensors and actuators, so that their mechanical properties come to be very important for reliability evaluation. However, there is no standardized method to evaluate the mechanical properties of material used in MEMS (micraelectromechanical system) device since the measured mechanical properties are influenced by many factors such as surface condition, friction force, etc. Hence, we intended to evaluate the mechanical properties of thin film in our study, which is important in mechanical operation. Because MEMS devices are usually operating in elastic range, the Young's modules and yield strength were evaluated by using microcantilever beam technique. First, Al cantilever beams were fabricated using the silicon bulk micromachining technology to have various film thickness. And then, the load-displacement curve was obtained by nanoindentation method. The linear relation in elastic range was utilized in deriving the Young's modulus of Al film, which gives us reproducible result regardless of film thickness. In high load range, the deviation from the linear relation was detected, so that the yield strength of Al film could be evaluated. It is found that the yield strength increases with decreasing film thickness. By applying the misfit dislocation theory and the Hall-Petch relation, the theoretical estimation could predict well the trend of yield strength.
Electromigration in Molten-phase Ge2Sb2Te5 and Effects of Doping on Atomic Migration Rate
주영창,양태열,조주영,박영진 한국세라믹학회 2012 한국세라믹학회지 Vol.49 No.1
Electromigration in molten Ge2Sb2Te5 (GST) was characterized using pulsed DC stress to an isolated line structure. When an electrical pulse was applied to the GST, GST lines were melted by Joule heating, and Ge and Sb atoms migrate to the cathode, whereas Te atoms migrate to the anode. This elemental separation in the molten GST was caused by an electrostatic forceinduced electromigration. The effects of O-, N-, and Bi-doping on the electromigration were also investigated, and atomic mobility changes by the doping were investigated by quantifying DZ* values. The Bi -doping did not affect the DZ* values of the constituent atoms in the molten GST, but the DZ* values decreased by O-doping and N-doping.
반도체 배선용 저 유전 물질에서의 구리 확산에 대한 전기적 신뢰성 평가
이희찬,주영창,노현욱,윤도영,이진규,차국헌,Lee Hee-Chan,Joo Young-Chang,Ro Hyun-Wook,Yoon Do-Young,Lee Jin-kyu,Char Kook-Heon 한국마이크로전자및패키징학회 2004 마이크로전자 및 패키징학회지 Vol.11 No.3
PMSSQ (Poly Methyl Silsesquioxane)-based matrix에 BTMSE (Bis Tri Methoxy Silyl Ethane) 를 첨가한 low-k물질의 전기적 특성을 조사하였다. 우리는 절연체로 copolymer를 사용하여 금속-절연체 -실리콘 구조를 만들고 BTS 실험을 통하여 누설 전류와 파괴 시간을 측정하였다. 코 폴리머의 기공이 $30\%$ 이상이 되었을 때, 파괴 시간이 급속하게 감소되어 진다. 온도에 관하여 파괴 시간으로부터 코 폴리머를 통한 구리 확산의 활성화 에너지는 1.51eV가 측정되었다. We investigated the electrical properties of copolymer low-k materials that are compromised of the PMSSQ(Poly Methyl Silsesquioxane)-based matrix with the BTMSE (Bis Tri Methoxy Silyl Ethane) additives. We manufactured MIS-type test samples using the copolymer as the insulator and measured their leakage current and failure time by means of the BTS (bias-temperature-stress) test. The failure time was observed to decrease drastically when the porosity of the copolymer was increased over $30\%$. From the measurement of failure time with respect to temperature. the activation energy of Cu drift through the copolymer was calculated to be 1.51 eV.
잉크젯 프린팅된 Cu 박막의 응력해소를 통한 전기적 특성 개선
이설민,주영창,Yi, Seol-Min,Joo, Young-Chang 한국마이크로전자및패키징학회 2014 마이크로전자 및 패키징학회지 Vol.21 No.4
미래형 유연소자 개발 시 비용감소 및 공정적합성 개선을 위해 동박을 잉크젯 프린팅법을 이용해 공중합체 유연기판 상 형성하고, 전기적 특성에 열처리 분위기가 미치는 영향을 확인하기 위해 3 종류의 환원분위기에서 열처리를 진행하여 보았다. 그 결과 200도의 낮은 온도에서 환원 특성이 뛰어난 포름산 분위기에서 전도체 수준의 비저항은 얻을 수 있었으나, 열처리 시 발생하는 응력으로 인해 발생된 표면균열에 기인해 그 값이 기존 동박에 비해 매우 높았다. 이에 비정질재료에서 응용되는 응력해소법을 응용하여 표면균열을 억제한 결과 230도 열처리 시 기존 열처리 방법에서는 $7.4{\mu}{\Omega}cm$의 비저항을 보이나, 응력해소를 통한 표면 균열이 억제된 시편에서는 $3.4{\mu}{\Omega}cm$의 비저항 값을 얻을 수 있었다. 특히 등온열처리에 의한 응력해소 효과를 확인하기 위해 동일 온도에서 등온시간 없이 열처리를 진행한 결과, 표면균열이 억제되지 못함을 확인할 수 있었다. Using flexible bismaleimide-triazine co-polymer as a substrate, inkjet-printed Cu films were also investigated for low-cost and process feasibility of flexible electronics. After annealing at $200^{\circ}C$ for 1 h under various reducing ambient, surface color was changed to red and electrical resistivity was decreased to the level of conductor under formic acid ambient. However, its resistivity was much higher than conventional copper films due to surface crack. In order to reduce the residual film stress after annealing, additional isothermal treatment was inserted before anneal hiring the stress relaxation applied in processes of amorphous materials. As a result, no surface crack was observed and electrical resistivity of $3.4{\mu}{\Omega}cm$ was measured after annealing at $230^{\circ}C$ with stress relaxation while electrical resistivity of $7.4{\mu}{\Omega}cm$ was observed after normal annealing without relaxation. The effect of stress relaxation was also confirmed by observing surface crack after decreasing the relaxation time to 0 min.