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Kunihiro SUZUKI,Yoko TADA,Yuji KATAOKA,Tsutomu NAGAYAMA 대한전자공학회 2009 Journal of semiconductor technology and science Vol.9 No.1
Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1 keV once it is calibrated in the higher energy region.
Suzuki, Kunihiro,Tada, Yoko,Kataoka, Yuji,Nagayama, Tsutomu The Institute of Electronics and Information Engin 2009 Journal of semiconductor technology and science Vol.9 No.1
Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1keV once it is calibrated in the higher energy region.
Kunihiro SUZUKI,Yoko TADA,Yuji KATAOKA,Tsutomu NAGAYAMA 대한전자공학회 2009 Journal of semiconductor technology and science Vol.8 No.1
Monte Carlo simulation is widely used for predicting ion implantation profiles in amorphous targets. Here, we compared Monte Carlo simulation results with a vast database of ion implantation secondary ion mass spectrometry (SIMS), and showed that the Monte Carlo data sometimes deviated from the experimental data. We modified the electron stopping power model, calibrated its parameters, and reproduced most of the database. We also demonstrated that Monte Carlo simulation can accurately predict profiles in a low energy range of around 1 keV once it is calibrated in the higher energy region.