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Handan Mert,Hikmet Yılmaz,Kıvanc Irak,Serkan Yıldırım,Nihat Mert 한국축산식품학회 2018 한국축산식품학회지 Vol.38 No.2
Thisstudy aims to investigate the protective effects of kefir against myocardial infarction induced by isoproterenol (ISO). The rats were randomly divided into 4 groups, each group consisting of 8 rats. The control group, the kefir group (5 mL/kg/d kefir administered to rats as intra-gastric gavage for 60 d), the ISO group (100 mg/kg ISO was administered to rats, s.c. on 61. and 62. d), and kefir+ISO group (5 mL/kg/d kefir was administered to rats intra gastric gavage for 60 days prior to ISO, 100 mg/kg in twodoses on day 61 and 62). 12 h after the last ISO dose, all rats were decapitated and their blood samples were collected. Cardiac tissue was reserved for histopathological examination. creatine kinase (CK), alanine aminotransferase (ALT), aspartate aminotransferase (AST), lactate dehydrogenase (LDH), triglycerides, total cholesterol,very low density lipoprotein (VLDL), low density lipoprotein (LDL), high density lipoprotein (HDL) and glucose were measured by autoanalyzer, whole blood malondialdehyde (MDA), glutathione (GSH) and plasma advanced oxidation protein products (AOPP) levels were measured spectrophotometrically. It was determined that in the group of kefir+ISO, the levels of AST (p
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The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
Durmuş Haziret,Tataroğlu Adem,Altındal Şemsettin,Yıldırım Mert 한국물리학회 2022 Current Applied Physics Vol.44 No.-
Schottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (ΦB0) values were obtained for higher temperatures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier inhomogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and ΦB0 - q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80–160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm-2 K-2 (80–160 K) and 13.167 A cm-2 K-2 (180–300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm-2 K-2. This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.
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