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Size control of Co-doped ZnO rods by changing the solvent
Zhao, Jing,Yan, Xiaoqin,Lei, Yang,Zhao, Yanguang,Huang, Yunhua,Zhang, Yue Techno-Press 2012 Advances in materials research Vol.1 No.1
In this work, the Co-doped ZnO rods were prepared by the hydrothermal method. The size of these rods can be changed from micro-size to nano-size by using different solutions during the preparation. The results of transmission electron microscopy (TEM) and selected area electron diffraction (SAED) showed that the as-prepared nano-sized Co-doped rods have single-crystal structure. The polarized Raman experiments were presented on an individual micro-sized Co-doped ZnO rod in the $X(YY)\vec{X}$, $X(ZY)\vec{X}$ and $X(ZZ)\vec{X}$ configurations, the results of polarized Raman indicated that these rods are crystallized and their growth direction is parallel to c-axis.
ZnO nanowire array ultraviolet photodetectors with self-powered properties
Zhiming Bai,Xiaoqin Yan,Xiang Chen,Hanshuo Liu,Yanwei Shen,Yue Zhang 한국물리학회 2013 Current Applied Physics Vol.13 No.1
A ZnO nanowire (NW) array ultraviolet photodetector (PD) with Pt Schottky contacts has been fabricated on a glass substrate. Under UV light illumination, this PD showed a high photo-to-dark current ratio of 892 at 30 V bias. Interestingly, it was also found that this PD had a high sensitivity of 475 without external bias. This phenomenon could be explained by the asymmetric Schottky barrier height (SBH) at the two ends causing different separation efficiency of photogenerated electronehole pairs, which resulted in the formation of photocurrent. It is anticipated to have potential applications in self-powered UV detection field.
Yanwei Shen,Xiang Chen,Xiaoqin Yan,Fang Yi,Zhiming Bai,Xin Zheng,Pei Lin,Yue Zhang 한국물리학회 2014 Current Applied Physics Vol.14 No.3
High quality n-ZnO/p-GaN heterojunction was fabricated by growing highly crystalline ZnO epitaxial films on commercial p-type GaN substrates via radio frequency (RF) magnetron sputtering. Low-voltage blue light emitting diode with a turn-on voltage of w2.5 V from the n-ZnO/p-GaN heterojunction was demonstrated. The diode gives a bright blue light emission located at w460 nm and a low threshold voltage of 2.7 V for emission. Based on the results of the photoluminescence (PL) and electroluminescence (EL) spectra, the origins of the EL emissions were studied in the light of energy band diagrams of ZnOeGaN heterojunction, and may attribute to the radiative recombination of the holes in p-GaN and the electrons injected from n-ZnO, which almost happened on the side of p-GaN layer. These results may have important implications for developing short wavelength optoelectronic devices.