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AlN with Strong Blue Emission Synthesized Through a Solventless Route
Wei Wang,Peng Zhang,Xiaobai Wang,Xiang Lei,Xiaodong Chen,Hong Ding,Hua Yang 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2016 NANO Vol.11 No.2
Aluminum nitride (AlN) with strong blue emission at 450 nm has been synthesized from hexahydrate aluminum chloride and urea above 850℃ via a solventless route. Several aluminum and nitrogen sources are selected and well investigated to determine the effect of AlN synthesis. Moreover, the structure, component, morphology, photoluminescence properties and possible synthesis mechanism are also discussed carefully.
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Nonnegative Tensor Cofactorization and Its Unified Solution
Xiaobai Liu,Qian Xu,Shuicheng Yan,Gang Wang,Hai Jin,Seong-Whan Lee IEEE 2014 IEEE TRANSACTIONS ON IMAGE PROCESSING - Vol.23 No.9
<P>In this paper, we present a new joint factorization algorithm, called nonnegative tensor cofactorization (NTCoF). The key idea is to simultaneously factorize multiple visual features of the same data into nonnegative dimensionality-reduced representations, and meanwhile, to maximize the correlations of the low-dimensional representations. The data are generally encoded as tensors of arbitrary order, rather than vectors, to preserve the original data structures. NTCoF provides a simple and efficient way to fuse multiple complementary features for enhancing the discriminative power of the desired rank-reduced representations under the nonnegative constraints. We formulate the related objectives with a block-wise quadratic nonnegative function. To optimize, a unified convergence provable solution is developed. This solution is applicable for any nonnegative optimization problems with block-wise quadratic objective functions, and thus offer an unified platform based on which specific solution can be directly derived by skipping over tedious proof about algorithmic convergence. We apply the proposed algorithm and solution on three image tasks, face recognition, multiclass image categorization, and multilabel image annotation. Results with comparisons on public challenging data sets show that the proposed algorithm can outperform both the traditional nonnegative methods and the popular feature combination methods.</P>
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Hongxi Liu,Hong Qiu,Xiaobai Chen,Mingpeng Yu,Mingwen Wang 한국물리학회 2009 Current Applied Physics Vol.9 No.6
ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10-3 Ω cm), the highest free electron concentration (4.63 × 1020 cm-3) and a moderate Hall mobility (4.0 ㎠ V-1 s-1). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions. ZnO:Al films were deposited on glass substrates at 300 K and 673 K by direct current magnetron sputtering with the oblique target. The Ar pressure was adjusted to 0.4 Pa and 1.2 Pa, respectively. All the films have a wurtzite structure and grow with a c-axis orientation in the film growth direction. The films grow mainly with columnar grains perpendicular to the substrate and some granular grains also exist in the films. The film deposited at 673 K and 0.4 Pa has the largest grains whereas that prepared at 300 K and 0.4 Pa consists of the smallest grains and is porous. The films exhibit an n-type semiconducting behavior at room temperature. The ZnO:Al film deposited at 673 K and 0.4 Pa has the lowest resistivity (3.40 × 10-3 Ω cm), the highest free electron concentration (4.63 × 1020 cm-3) and a moderate Hall mobility (4.0 ㎠ V-1 s-1). The film deposited at 300 K and 0.4 Pa has the highest resistivity and the lowest free electron concentration and Hall mobility. A temperature dependence of the resistivity reveals that the carrier transport mechanism is Mott’s variable range hopping in the temperature region below 100 K and thermally activated band conduction above 215 K. The activation energy for the film deposited at 300 K and 0.4 Pa is 41 meV and that for the other films is about 35 meV. All the films have an average optical transmittance of over 85% in the visible wavelength range. The absorption edge of the film deposited at 300 K and 0.4 Pa shifts to the longer wavelength (redshift) relative to the films prepared under the other conditions.
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