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RISS 인기검색어
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- 저자 : Xianzhe Chen (검색결과 3 건)
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Xianzhe Shi,Xiuxia Wang,Biao Chen,Junko Umeda,Katsuyoshi Kondoh,Jianghua Shen 대한금속·재료학회 2023 METALS AND MATERIALS International Vol.29 No.8
In this work, a bimodal grain structure was developed for commercial purity Ti(CP-Ti) via powder metallurgy processing,followed by free hot forging and then heat treatment. The bi-modal grains were characterized with electron backscatterdiffraction. The mechanical tests showed that in comparison to the uniform and equiaxed grain structure, the bimodalgrains improved the yield strength of CP-Ti significantly, while it maintains a merely changed ultimate tensile strength andelongation to failure. In addition, an interesting yield plateau was observed in the bimodal CP-Ti. To explore underlyingmechanisms behind the phenomenon, the microstructures of the samples before and after testing were carefully examined. The results revealed that geometrically necessary dislocations accumulating at the interface between coarse and fine grainsinduced back stress hardening, which together with the statistically stored dislocations also accounted for the yield plateauin the bimodal CP-Ti.
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Low-Cost Flexible Strain Sensor Based on Thick CVD Graphene
Bailiang Chen,Ying Liu,Guishan Wang,Xianzhe Cheng,Guanjun Liu,Jing Qiu,Kehong Lv 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2018 NANO Vol.13 No.11
Flexible strain sensors, as the core member of the family of smart electronic devices, along with reasonable sensing range and sensitivity plus low cost, have rose a huge consumer market and also immense interests in fundamental studies and technological applications, especially in the field of biomimetic robots movement detection and human health condition monitoring. In this paper, we propose a new flexible strain sensor based on thick CVD graphene film and its low-cost fabrication strategy by using the commercial adhesive tape as flexible substrate. The tensile tests in a strain range of ~30% were implemented, and a gage factor of 30 was achieved under high strain condition. The optical microscopic observation with different strains showed the evolution of cracks in graphene film. Together with commonly used platelet overlap theory and percolation network theory for sensor resistance modeling, we established an overlap destructive resistance model to analyze the sensing mechanism of our devices, which fitted the experimental data very well. The finding of difference of fitting parameters in small and large strain ranges revealed the multiple stage feature of graphene crack evolution. The resistance fallback phenomenon due to the viscoelasticity of flexible substrate was analyzed. Our flexible strain sensor with low cost and simple fabrication process exhibits great potential for commercial applications.
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Out-of-plane spin polarization and antiferromagnetic spin Hall effect
Cheng Song,Xianzhe Chen,Xiaofeng Zhou,Hyunsoo Yang,Feng Pan 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
The discovery of the spin Hall effect (SHE) enabled the efficient generation and manipulation of the spin current. The magnetic spin Hall effect provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization. In this talk, we report the magnetic spin Hall effect both in non-collinear antiferromagnet Mn<sub>3</sub>Pt and a collinear antiferromagnet Mn<sub>2</sub>Au. We generate tiny out-of-plane polarized spin current (σZ) when the charge current is applied along the axis perpendicular to the magnetic mirror plane of Mn<sub>3</sub>Pt/permalloy bilayers, but robust when the current is parallel to the magnetic mirror plane in all of the Mn<sub>3</sub>Pt films with different orientations. In Mn<sub>2</sub>Au, the spin currents are generated at two spin sublattices with broken spatial symmetry, and the antiparallel antiferromagnetic moments play an important role. Therefore, we term the Néel vector-dependent spin Hal effect the ‘antiferromagnetic spin Hall effect’ (AFM-SHE). The out-of-plane spins from the antiferromagnetic spin Hall effect are favorable for the efficient switching of perpendicular magnetized devices, which is required for high-density applications. The antiferromagnetic spin Hall effect adds another twist to the atomic-level control of spin currents via the antiferromagnetic spin structure.
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