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Electronic Transport in Molecular Self-Assembled Monolayer Devices
Wenyong Wang,Takhee Lee,Reed, M.A. IEEE 2005 Proceedings of the Institute of Electrical and Ele Vol.93 No.10
<P>A review on the mechanisms and characterization methods of electronic transport through self-assembled monolayers (SAMs) is presented. Using SAMs of alkanethiols in a nanometer-scale-device structure, tunneling is unambiguously demonstrated as the main intrinsic conduction mechanism for defect-free large bandgap SAMs, exhibiting well-known temperature and length dependencies. In-elastic electron tunneling spectroscopy exhibits clear vibrational modes of the molecules in the device, presenting direct evidence of the presence of molecules in the device.</P>
Electron tunnelling in self-assembled monolayers
Wang, Wenyong,Lee, Takhee,Reed, Mark A The Institute of Physics 2005 Reports on progress in physics Vol.68 No.3
<P>A review on the mechanisms and characterization methods of electronic transport through self-assembled monolayers (SAMs) is presented. Using SAMs of alkanethiols in a nanometre scale device structure, tunnelling is unambiguously demonstrated as the main intrinsic conduction mechanism for defect-free large bandgap SAMs, exhibiting well-known temperature and length dependences. Inelastic electron tunnelling spectroscopy exhibits clear vibrational modes of the molecules in the device, presenting direct evidence of the presence of molecules in the device.</P>
Cross-platform characterization of electron tunneling in molecular self-assembled monolayers
이탁희,Wenyong Wang,J. J. Zhang,J. Su, J,F. Klemic,M. A. Ree 한국물리학회 2005 Current Applied Physics Vol.5 No.3
Electron tunneling is investigated for the alkanethiol self-assembled monolayers (SAMs) formed using three dierent devicestructures spanning from the nanometer to the micrometer scale. The measured currentvoltage characteristics for the alkanethiolSAMs can be explained by the classical metalinsulatormetal tunneling model and the tunneling current exhibits overall expo-nential trend on the molecular length. Although dierent structures give consistent results (such as decay coecient), unambiguousdetermination of the tunneling requires characterization of length and temperature dependencies..
Zhou, Kun,Wang, Wenyong,Wu, Chenhuang,Hu, Teng Electronics and Telecommunications Research Instit 2020 ETRI Journal Vol.42 No.3
Encrypted traffic classification plays a vital role in cybersecurity as network traffic encryption becomes prevalent. First, we briefly introduce three traffic encryption mechanisms: IPsec, SSL/TLS, and SRTP. After evaluating the performances of support vector machine, random forest, naïve Bayes, and logistic regression for traffic classification, we propose the combined approach of entropy estimation and artificial neural networks. First, network traffic is classified as encrypted or plaintext with entropy estimation. Encrypted traffic is then further classified using neural networks. We propose using traffic packet's sizes, packet's inter-arrival time, and direction as the neural network's input. Our combined approach was evaluated with the dataset obtained from the Canadian Institute for Cybersecurity. Results show an improved precision (from 1 to 7 percentage points), and some application classification metrics improved nearly by 30 percentage points.
Noise in ZnO nanowire field effect transistors.
Xiong, Hao D,Wang, Wenyong,Suehle, John S,Richter, Curt A,Hong, Woong-Ki,Lee, Takhee American Scientific Publishers 2009 Journal of Nanoscience and Nanotechnology Vol.9 No.2
<P>The noise power spectra in ZnO nanowire field effect transistors (FETs) were experimentally investigated and showed a classical 1/f dependence. A Hooge's constant of 5 x 10(-3) was estimated. This value is within the range reported for CMOS FETs with high-k dielectrics, supporting the concept that nanowires can be utilized for future beyond-CMOS electronic applications from the point of view of device noise properties. ZnO FETs measured in a dry O2 environment displayed elevated noise levels compared to in vacuum. At low temperature, random telegraph signals are observed in the drain current.</P>