http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Valov, Ilia (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Lee, Doh-Kwon,Fischer, Claus C.,Valov, Ilia,Reinacher, Jochen,Stork, Alexandra,Lerch, Martin,Janek, Juergen The Royal Society of Chemistry 2011 Physical chemistry chemical physics Vol.13 No.3
<P>The mobility and electrochemical activity of nitrogen inside and/or at the surface of ionic compounds is of fundamental, as well as of possibly practical, relevance. In order to better understand the role of nitrogen anions in solid electrolytes, we measured the transference number of nitrogen in yttria-stabilized zirconia (YSZ) by a concentration cell technique as a function of oxygen activity at different temperatures in the range of 1023 ≤<I>T</I>/<I>K</I>≤ 1123. YSZ doped with 1.9 wt% of N (YSZ:N) turned out to have an appreciable nitrogen transference number, which increased from 0 to 0.1 with decreasing oxygen activity in the range of −20 < log<I>a</I><SUB>O<SUB>2</SUB></SUB> < −14. The stability of N in YSZ:N, however, has yet to be elucidated under oxidizing conditions.</P> <P>Graphic Abstract</P><P>Solid state electrochemistry with (di-)nitrogen? EMF measurements with a zirconium oxide nitride (N-doped YSZ) solid electrolyte under reducing conditions reveal a significant transference number of nitrogen anions. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c003991h'> </P>
-
Interfacial Metal–Oxide Interactions in Resistive Switching Memories
Cho, Deok-Yong,Luebben, Michael,Wiefels, Stefan,Lee, Kug-Seung,Valov, Ilia American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.22
<P>Metal oxides are commonly used as electrolytes for redox-based resistive switching memories. In most cases, non-noble metals are directly deposited as ohmic electrodes. We demonstrate that irrespective of bulk thermodynamics predictions an intermediate oxide film a few nanometers in thickness is always formed at the metal/insulator interface, and this layer significantly contributes to the development of reliable switching characteristics. We have tested metal electrodes and metal oxides mostly used for memristive devices, that is, Ta, Hf, and Ti and Ta2O5, HfO2, and SiO2. Intermediate oxide layers are always formed at the interfaces, whereas only the rate of the electrode oxidation depends on the oxygen affinity of the metal and the chemical stability of the oxide matrix. Device failure is associated with complete transition of short-range order to a more disordered main matrix structure.</P>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
