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        Graphitic carbon nitride based Z scheme photocatalysts: Design considerations, synthesis, characterization and applications

        Utpal Ghosh,Anjali Pal 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.79 No.-

        Graphitic carbon nitride (g-C3N4) has emerged as the most favored photocatalyst owing to its intriguingelectronic band structure, stability, cost effectiveness, unique layered structure and facile synthesisprocedure. But, the pristine g-C3N4 suffers from a limited photocatalytic activity because of its low chargecarrier separation efficiency. Construction of a Z scheme photocatalyst could enhance the charge carriersuppression efficiency and increases the photocatalytic performance significantly. In this review, thedesign aspects of g-C3N4 based Z scheme photocatalysts and the considerations in the selection ofsynthesis procedures of g-C3N4 based Z scheme photocatalysts have been analyzed critically. Thecharacterization methods of Z scheme photocatalysts have also been discussed. Further, the recentenvironmental applications of g-C3N4 based Z scheme photocatalysts have been explored. The reviewfinishes with the concluding remarks and a brief discussion on future challenges and prospects of g-C3N4based Z scheme photocatalysts.

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        Influence of doping of mercury atom(s) on optoelectronic properties of binary cadmium chalcogenides - A density functional theory based investigation with different exchange-correlation functionals and including spin-orbit coupling

        Manish Debbarma,Utpal Sarkar,Bimal Debnath,Sayantika Chanda,Debankita Ghosh,Rahul Bhattacharjee,Surya Chattopadhyaya 한국물리학회 2018 Current Applied Physics Vol.18 No.6

        Influence of doping of mercury atom(s) on optoelectronic properties of binary cadmium chalcogenides have been investigated theoretically by designing the mercury doped cadmium chalcogenide ternary alloys in B3 phase at some specific Hg-concentrations and studying their optoelectronic properties using DFT based FP-LAPW methodology. The structural properties are computed using WC-GGA, while spin-orbit coupling included electronic and optical properties are computed using TB-mBJ, EV-GGA, B3LYP and WC-GGA exchange-correlation functionals. In addition, electronic properties of mercury chalcogenides are calculated precisely using the GGA+U functionals. The concentration dependence of lattice parameter and bulk modulus of each of the HgxCd1−xS, HgxCd1−xSe, HgxCd1−xTe alloy systems show almost linearity. For each of the alloy systems, band gap decreases almost linearly with increase in Hg-concentration in the unit cell and contribution from charge exchange to the band gap bowing is larger than that from for each of the volume deformation and structural relaxation. Also, covalent bonding exists between different constituent atoms in each compound. Optical properties of each specimen are computed from their spectra of dielectric function, refractive index, extinction coefficient, normal incidence reflectivity, optical conductivity, optical absorption coefficient and energy loss function. Several calculated results have been compared with available experimental and other theoretical data.

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