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Tzu-Sung Wu,Mansour Karkoub,Chien-Ting Chen,Wen-Shyong Yu,Ming-Guo Her,Jui-Yiao Su 제어·로봇·시스템학회 2013 International Journal of Control, Automation, and Vol.11 No.6
It is proposed here to use a robust tracking design based on adaptive fuzzy control technique to control a class of multi-input-multi-output (MIMO) nonlinear systems with time delayed uncertainty in which each uncertainty is assumed to be bounded by an unknown gain. This technique will overcome modeling inaccuracies, such as drag and friction losses, effect of time delayed uncertainty, as well as parameter uncertainties. The proposed control law is based on indirect adaptive fuzzy control. A fuzzy model is used to approximate the dynamics of the nonlinear MIMO system; then, two on-line estimation schemes are developed to overcome the nonlinearities and identify the gains of the delayed state uncertainties, simultaneously. The advantage of employing an adaptive fuzzy system is the use of linear analytical results instead of estimating nonlinear system functions with an online update law. The adaptive fuzzy scheme uses a Variable Structure (VS) scheme to resolve the system uncertainties, time delayed uncertainty and the external disturbances such that H∞ tracking performance is achieved. The control laws are derived based on a Lyapunov criterion and the Riccati-inequality such that all states of the system are uniformly ultimately bounded (UUB). Therefore, the effect can be reduced to any prescribed level to achieve H∞ tracking performance. A two-connected inverted pendulums system on carts and a two-degree-of-freedom mass-spring-damper system are used to validate the performance of the proposed fuzzy technique for the control of MIMO nonlinear systems.
Tien-Tung Luong,Binh Tinh Tran,Yen-Teng Ho,Ting-Wei Wei,Yue-Han Wu,Tzu-Chun Yen,Lin-Lung Wei,Jer-Shen Maa,Edward Yi Chang 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.3
The effects of surface pre-treatments and the role of an AlN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AlN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AlN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2HSiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN.