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Strain imaging of a Cu_2S switching device
Keiji Takata,Ryota Tamura,Toshihiro Kasama,Masataka Fukuyama,Shin Yokoyama,Hiroshi Kajiyama 한국물리학회 2011 Current Applied Physics Vol.11 No.6
Strain imaging of electrochemical behavior of a solid electrolyte Cu_2S in switching devices for nonvolatile memories is presented. The precipitation and dissolution of Cu, and the nonstoichiometry changes cause changes in volume. Strain imaging we have proposed detects the volume changes through the surface displacements using scanning probe microscopy and provides high resolution images. We observed the distributions of the electrochemical reactions in Cu_2S and located the Cu bridges causing switching.