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Seongjae Cho,Min-Chul Sun,Garam Kim,Theodore I. Kamins,Byung-Gook Park,James S. Harris, Jr 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.3
In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of rn.v TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting Ge-AIxGa1-xAsGe system has been optimized by simulation in terms of aluminum (AI) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (UP) logic technology can be achieved by the proposed device. The optimum AI composition turned out to be around 20% (x=0.2).
Cho, Seong-Jae,Sun, Min-Chul,Kim, Ga-Ram,Kamins, Theodore I.,Park, Byung-Gook,Harris, James S. Jr. The Institute of Electronics and Information Engin 2011 Journal of semiconductor technology and science Vol.11 No.3
In this work, a tunneling field-effect transistor (TFET) based on heterojunctions of compound and Group IV semiconductors is introduced and simulated. TFETs based on either silicon or compound semiconductors have been intensively researched due to their merits of robustness against short channel effects (SCEs) and excellent subthreshold swing (SS) characteristics. However, silicon TFETs have the drawback of low on-current and compound ones are difficult to integrate with silicon CMOS circuits. In order to combine the high tunneling efficiency of narrow bandgap material TFETs and the high mobility of III-V TFETs, a Type-I heterojunction tunneling field-effect transistor (I-HTFET) adopting $Ge-Al_xGa_{1-x}As-Ge$ system has been optimized by simulation in terms of aluminum (Al) composition. To maximize device performance, we considered a nanowire structure, and it was shown that high performance (HP) logic technology can be achieved by the proposed device. The optimum Al composition turned out to be around 20% (x=0.2).
Cho, Seongjae,Park, Byung-Gook,Yang, Changjae,Cheung, Stanley,Yoon, Euijoon,Kamins, Theodore I,Yoo, S J Ben,Harris, James S Optical Society of America 2012 Optics express Vol.20 No.14
<P>Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode without any complicated manipulation for alternating material properties of germanium. Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Gamma-valley of germanium. (c) 2012 Optical Society of America</P>