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      • KCI등재

        ECR plasma precleaning for RuO2 MOCVD

        Taejong Eom,Chongmu Lee,Hyounwoo Kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52

        RuO2 is widely studied as a lower electrode material for high dielectric capacitors in dynamic random access and ferroelectric random access memories. Precleaning of the underlying TiN lm surface is essential to enhance RuO2 nucleation in RuO2 metal organic chemical vapor deposition (MOCVD). In this study, the eects of hydrogen, oxygen, and argon electron cyclotron resonance (ECR) plasma precleaning on RuO2 nucleation were investigated using X-ray diraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to oer the highest RuO2 nucleation density among these three pretreatments. The mechanism through which RuO2 nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen plasma removes nitrogen and oxygen atoms at the TiN lm surface so that the underlying TiN lm surface is changed to Ti-rich TiN

      • KCI등재

        Ru-MOCVD를 위한 TaSiN막 표면의 ECR 플라즈마 및 Pd 스퍼터링 전처리 세정효과에 관한 연구

        임종민,박현아,엄태종,이종무 대한금속재료학회 2004 대한금속·재료학회지 Vol.42 No.5

        Pretreatment of the underlying film surface is essential in molecular organic chemical vapor deposition (MOCVD) of metals. Effects of surface treatment techniques including Ar plasma, H_(2) plasma, and Pd sputtering treatments of the underlying TaSiN film surface on the Ru nucleation density in Ru-MOCVD were compared with each other. According to the scanning electron microscopy (SEM) and Auger electron emission spectrometry (AES) analysis results Pd sputtering was found to be most efficient in enhancing Ru nucleation. Thin Pd buffer layer formed on the TaSiN film by sputtering offers catalytic surface for easier nucleation of Ru. On the other hand hydrogen plasma treatment enhances Ru nucleation by removing oxygen and nitrogen atoms at the TaSiN film surface. In contrast Ar plasma treatment removes not only oxygen and nitrogen atoms but also Ta atoms. Pd sputtering seems to be the best of these three pretreatment techniques for Ru-MOCVD. (Received December 22, 2003)

      • SCOPUSKCI등재

        ECR플라즈마 전처리가 RuO<sub>2</sub> MOCVD시 핵생성에 끼치는 효과

        엄태종,박연규,이종무,Eom, Taejong,Park, Yunkyu,Lee, Chongmu 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.2

        [ $RuO_2$ ]는 DRAM과 FRAM소자에서 고유전 capacitors의 저전극물질로서 폭넓게 연구되고 있다. 본 연구에서는 XRD, SEM, AFM 분석 등을 통하여 금속유기 화학 증착법(MOCVD)으로 $RuO_2$ 증착시 핵생성에 영향을 미치는 수소, 산소, 아르곤 ECR플라즈마 전처리 효과를 조사하였으며, 아르곤 ECR플라즈마 전처리의 경우 가장 높은 핵생성 밀도를 나타내었다. ECR 플라즈마 전처리를 통한 $RuO_2$의 핵생성 향상 메카니즘은 아르곤이나 수소 ECR 플라즈마는 TiN막 표면의 질소나 산소원자를 제거하고 따라서 TiN막 표면은 Ti-rich TiN으로 바뀌게 되는 것이다. $RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

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