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The uniaxial strain test - a simple method for the characterization of porous materials
Fiedler, T.,Ochsner, A.,Gracio, J. Techno-Press 2006 Structural Engineering and Mechanics, An Int'l Jou Vol.22 No.1
The application of cellular materials in load-carrying and security-relevant structures requires the exact prediction of their mechanical behavior, which necessitates the development of robust simulation models and techniques based on appropriate experimental procedures. The determination of the yield surface requires experiments under multi-axial stress states because the yield behavior is sensitive to the hydrostatic stress and simple uniaxial tests aim only to determine one single point of the yield surface. Therefore, an experimental technique based on a uniaxial strain test for the description of the influence of the hydrostatic stress on the yield condition in the elastic-plastic transition zone at small strains is proposed and numerically investigated. Furthermore, this experimental technique enables the determination of a second elastic constant, e.g., Poisson's ratio.
The uniaxial strain test - a simple method for the characterization of porous materials
J. Grácio,T. Fiedler,A. Öchsner 국제구조공학회 2006 Structural Engineering and Mechanics, An Int'l Jou Vol.22 No.1
The application of cellular materials in load-carrying and security-relevant structures requires the exact prediction of their mechanical behavior, which necessitates the development of robust simulation models and techniques based on appropriate experimental procedures. The determination of the yield surface requires experiments under multi-axial stress states because the yield behavior is sensitive to the hydrostatic stress and simple uniaxial tests aim only to determine one single point of the yield surface. Therefore, an experimental technique based on a uniaxial strain test for the description of the influence of the hydrostatic stress on the yield condition in the elastic-plastic transition zone at small strains is proposed and numerically investigated. Furthermore, this experimental technique enables the determination of a second elastic constant, e.g., Poisson’s ratio.
CMOS Compatible Fabrication Technique for Nano-Transistors by Conventional Optical Lithography
Horst, C.,Kallis, K.T.,Horstmann, J.T.,Fiedler, H.L. The Institute of Electronics and Information Engin 2004 Journal of semiconductor technology and science Vol.4 No.1
The trend of decreasing the minimal structure sizes in microelectronics is still being continued. Therefore in its roadmap the Semiconductor Industries Association predicts a printed minimum MOS-transistor channel length of 10 nm for the year 2018. Although the resolution of optical lithography still dramatically increases, there are known and proved solutions for structure sizes significantly below 50 nm up to now. In this work a new method for the fabrication of extremely small MOS-transistors with a channel length and width below 50 nm with low demands to the used lithography will be explained. It's a further development of our deposition and etchback technique which was used in earlier research to produce transistors with very small channel lengths down to 30 nm, with a scaling of the transistor's width. The used technique is proved in a first charge of MOS-transistors with a channel area of W=200 nm and L=80 nm. The full CMOS compatible technique is easily transferable to almost any other technology line and results in an excellent homogeneity and reproducibility of the generated structure size. The electrical characteristics of such small transistor will be analyzed and the ultimate limits of the technique will be discussed.