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Kim, Sunbo,Jung, Junhee,Kim, YoungKuk,Le, Anh Huy Tuan,Ahn, Shihyun,Park, Jinjoo,Kim, Yongjun,Dao, Vinh Ai,Lee, Jaehyeong,Lee, Youn-Jung American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.5
<P>This study investigates the effect of hydrogen gas ratio [H-2/H-2+Ar] had on the structural, optical and electrical properties of ITO films for use in amorphous/crystalline silicon hetero-junction solar cells. The pulsed DC magnetron sputtered ITO films showed a higher optical transmittance for a hydrogen gas ratio of 3.2%. The lowest sheet resistance (43.12 Omega/square) and resistivity (3.25x10(-4) Omega.cm) were observed for ITO films where the hydrogen gas ratio was in the range from 1.31 to 3.22%. The Hall mobility of the ITO films decreased from 55.3 to 42.5 cm(2)/V.s with an increase in the hydrogen gas ratio from 1.31 to 3.2%. The surface morphology and crystallinity of films improved for the low hydrogen gas ratio while the characteristics of the ITO films deteriorated when the hydrogen ratio was higher than 3.2%. Then, we fabricated amorphous/crystalline silicon hetero-junction solar cells using ITO films for the front anti-reflection layer, and a hydrogen gas ratio of 3.22% resulted in a short circuit current density (J(sc)) of 38.17 mA/cm(2) and an efficiency of 19.02%.</P>
Kim, Sunbo,Iftiquar, S. M.,Lee, Donhee,Lee, Hongjae,Kim, Jonghwan,Jung, Junhee,Oh, Donghyun,Dao, Vinh Ai,Yi, Junsin IEEE 2016 IEEE journal of photovoltaics Vol.6 No.4
<P>In heterojunction silicon solar cells (HJ-SCs), there is a possibility to reduce contact resistance at the front electrode by using a high-conductivity (sigma(d)) emitter. A hydrogen bonding configuration in the doped layers shows an increase in defect density with the doping, although the doping increases sigma(d) within a certain limit. Hence, a two-layer stacked emitter was used: one with a higher sigma(d) and the other with a reduced defect density. he emitter was stacked as a 3-nm-thick 3% doped (p2) layer with 7-nm-thick 0.5% doped (p1) double layer. A higher hydrogenation of the p2 layer showed better device performance, as it reduces series resistance from 2.4 to 1.5 Omega.cm(2). Furthermore, the carrier lifetime measurement, the atomic distribution across various layers, and the high-resolution transmission electron microscopy images show that the higher hydrogenation of the p2 layer might also have improved the a-Si: H/c-Si interface passivation, consequently improving the open-circuit voltage (V-oc) and efficiency (eta) of the HJ-SCs. The experimental results were found to be consistent with simulation results. Finally, the HJ-SCs with the hydrogen diluted p2.p1 stacked emitter show V-oc of 710 mV, fill factor of 75.43%, and eta close to 21%.</P>
Investigation of Electrical and Optical Properties of Highly Transparent TCO/Ag/TCO Multilayer.
Kim, Sunbo,Lee, Jaehyeong,Dao, Vinh Ai,Ahn, Shihyun,Hussain, Shahzada Qamar,Park, Jinjoo,Jung, Junhee,Lee, Chan,Song, Bong-Shik,Choi, Byoungdeog,Lee, Youn-Jung,Iftiquar, S M,Yi, Junsin American Scientific Publishers 2015 Journal of nanoscience and nanotechnology Vol.15 No.3
<P>Transparent conductive oxides (TCOs) have been widely used as transparent electrodes for optoelectronic devices, such as solar cells, flat-panel displays, and light-emitting diodes, because of their unique characteristics of high optical transmittance and low electrical resistivity. Among various TCO materials, zinc oxide based films have recently received much attention because they have advantages over commonly used indium and tin-based oxide films. Most TCO films, however, exhibit valleys of transmittance in the wavelength range of 550-700 nm, lowering the average transmittance in the visible region and decreasing short-circuit current (I-sc) of solar cells. A TCO/Ag/TCO multilayer structure has emerged as an attractive alternative because it provides optical characteristics without the valley of transmittance compared with a 100-nm-thick single-layer TCO. In this article, we report the electrical, optical and surface properties of TCO/Ag/TCO. These multi-layers were deposited at room temperature with various Ag film thicknesses from 5 to 15 nm while the thickness of TCO thin film was fixed at 40 nm. The TCO/Ag/TCO multi-layer with a 10-nm-thick Ag film showed optimum transmittance in the visible (400-800 nm) wavelength region. These multi-layer structures have advantages over TCO layers of the same thickness.</P>