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자동차 충돌안전도 해석용 유한요소 인체 모델 개발 : Part I-50% 성인 남성 모델
이인혁(Inhyeok Lee),윤석배(Sukbae Yoon),이진희(Jinhee Lee),최형연(Hyung-Yun Choi) 한국자동차공학회 2002 한국자동차공학회 Symposium Vol.2002 No.11
The 50% male is a standard body size to evaluate vehicular crash occupant injuries.<br/> A finite element human model of 50% male, named H-model has been developed for occupant<br/> injury assessment. The H-model consists of flesh, skeleton, ligaments and internal organs all<br/> which have anatomically precise geometries and physiological mechanical properties. In this<br/> paper, the neck modeling of H-model would be mainly focused and presented. Occupant neck is<br/> the most vulnerable region especially for the rear-end impact. Low speed rear-end collision even<br/> often results in longtime lasting neck pains which so called "whiplash injury". The known<br/> injury mechanisms are, however, quite limited due to the complexity of neuromuscular structures<br/> of cervical spine. There exit many hypothetical theories to understand "whiplash injury"<br/> mechanism, which are proposed together with the experimental and(or) numerical findings. The<br/> H-model was used to simulate the rear-end impact volunteer sled test for representing the<br/> kinematics of head-neck complex. The further investigations utilizing secured numerical modeling<br/> scheme in this study would elucidate the "whiplash injury" mechanisms.
Mechanical effect of colloidal silica in copper chemical mechanical planarization
Lee, Hyunseop,Joo, Sukbae,Jeong, Haedo Elsevier 2009 Journal of materials processing technology Vol.209 No.20
<P><B>Abstract</B></P><P>The mechanical effect of colloidal silica concentration in copper chemical mechanical planarization (CMP) is considered in this paper by using friction force monitoring system. The copper peak was detected in the result of the energy-dispersive X-ray (EDX) spectra of the polishing residues. The addition of colloidal silica into copper CMP slurry increased both the material removal rate and the friction force. During CMP, as the concentration of the colloidal silica was increased, the temperature generated by the friction force also increased. To understand effect of abrasive concentration on the material removal and friction force, we considered the material removal and the friction energy for a single abrasive. The surface of the polished copper film was measured by X-ray photoelectron spectroscopy (XPS). All the material removal rates as a function of friction energy after polishing with various concentrations of colloidal silica had a non-linear characteristic.</P>
The effect of mixed abrasive slurry on CMP of 6H-SiC substrates
Hojun Lee,Boumyoung Park,Sukhoon Jeong,Sukbae Joo,정해도 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.3
Silicon Carbide (SiC) is a wide band gap semiconductor, being developed for high temperature, high power, and high frequency device applications. Many researchers have studied SiC polishing for the manufacturing of SiC and semiconductor substrates. However, these researchers have faced difficulties with a wafer preparation prior to epitaxial growth due to its hardness and remarkable chemical stability. A smooth and defect-free substrate surface is important to obtain good epitaxial layers. Therefore, a hybrid process, chemical mechanical polishing (CMP) has been proposed as a solution for preparing an epi-ready surface. During the experiments, the material removal rate (MRR) was investigated to learn how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm diamond. Furthermore, the dependency of mechanical factors, such as pressure, velocity, and abrasive concentration, were researched using a single abrasive slurry (SAS). The experiments especially focused on the epi-ready surface with a mixed abrasive slurry (MAS). The addition of nanometre sized diamond in the MAS provided a strong synergy between mechanical and chemical effects. Through the experiments, a chemical effect (KOH based) was essential, and the atomic-bit mechanical removal was found to be efficient to remove residual scratches from on MAS. In conclusion, the SiC CMP mechanism was quite different from that of relatively softer materials to gain both high quality surfaces and a high MRR. Silicon Carbide (SiC) is a wide band gap semiconductor, being developed for high temperature, high power, and high frequency device applications. Many researchers have studied SiC polishing for the manufacturing of SiC and semiconductor substrates. However, these researchers have faced difficulties with a wafer preparation prior to epitaxial growth due to its hardness and remarkable chemical stability. A smooth and defect-free substrate surface is important to obtain good epitaxial layers. Therefore, a hybrid process, chemical mechanical polishing (CMP) has been proposed as a solution for preparing an epi-ready surface. During the experiments, the material removal rate (MRR) was investigated to learn how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm diamond. Furthermore, the dependency of mechanical factors, such as pressure, velocity, and abrasive concentration, were researched using a single abrasive slurry (SAS). The experiments especially focused on the epi-ready surface with a mixed abrasive slurry (MAS). The addition of nanometre sized diamond in the MAS provided a strong synergy between mechanical and chemical effects. Through the experiments, a chemical effect (KOH based) was essential, and the atomic-bit mechanical removal was found to be efficient to remove residual scratches from on MAS. In conclusion, the SiC CMP mechanism was quite different from that of relatively softer materials to gain both high quality surfaces and a high MRR.
부식방지제 함량에 따른 구리 웨이퍼의 화학 기계적 연마특성 분석
주석배(Sukbae Joo),이현섭(Hyunseop Lee),정해도(Haedo Jeong) 한국기계가공학회 2008 한국기계가공학회 춘추계학술대회 논문집 Vol.2008 No.-
Cu CMP (Chemical Mechanical Planarization) has been used to remove copper film and obtain a planar surface which is essential for the semiconductor devices. Generally, it is known that chemical reaction is a dominant factor in Cu CMP comparing to Silicon dioxide CMP. Therefore, Cu CMP slurry has been regarded as an important factor in the entire process. This investigation focused on understanding the effect of corrosion inhibitor on copper surface and CMP results. Benzotriazole (BTA) was used as a corrosion inhibitor in this experiment. For the surface analysis, electrochemical characteristics of Cu was measured by a potentiostat and surface modification was investigated by X-ray photoelectron spectroscopy (XPS). As a result, corrosion potential (Ecorr) increased and nitrogen concentration ratio on the copper surface also increased with BTA concentration. These results indicate that BTA prevents Cu surface from corrosion and forms Cu-BTA layer on Cu surface. CMP results are also well matched with these results. Material removal rate (MRR) decreased with BTA concentration and static etch rate also showed same trend. Consequently, adjustment of BTA concentration can give us control of step height variation and furthermore, this can be applicable for Cu pattern CMP.
A Corresponding State Theory for the Viscosity of Liquids
김원수,Sukbae Lee 대한화학회 2008 Bulletin of the Korean Chemical Society Vol.29 No.1
A phenomenological theory of viscosity previously proposed by the present authors8 is applied to the corresponding state theory for the viscosity of liquid. Through the process of the formulation of the corresponding state equation, we can find the simple viscosity equation with no parameters in a reduced form. The liquid viscosities of various substances can be calculated using this equation when we know only the values of the molecular weight and critical constant of substances. A corresponding state equation for the viscosity of liquid from this theory may be applicable to predicting viscosities of various substances under varying temperature and pressure. As a result, this equation may be widely applied to chemical engineering.