http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Large-Scale Graphene Production Techniques for Practical Applications
Bae, Sukang,Lee, Seoung-Ki,Park, Min The Korean Vacuum Society 2018 Applied Science and Convergence Technology Vol.27 No.5
Many studies have been conducted on large-scale graphene synthesis by chemical vapor deposition. Furthermore, numerous researchers have attempted to develop processes that can continuously fabricate uniform and high-quality graphene. To compete with other types of carbon materials (carbon black, carbon fiber, carbon nanotubes, and so on), various factors, such as price, mass manufacturing capability, and quality, are crucial. Thus, in this study, we examine various large-scale graphene production methods focusing on cost competitiveness and productivity improvements for applications in various fields.
Towards industrial applications of graphene electrodes
Bae, Sukang,Kim, Sang Jin,Shin, Dolly,Ahn, Jong-Hyun,Hong, Byung Hee Royal Swedish Academy of Sciences 2012 Physica scripta Vol.2012 No.t146
<P>Since the first isolation of graphene in 2004 by mechanical exfoliation from graphite, many people have tried to synthesize large-scale graphene using various chemical methods. In particular, there has been a great number of advances in the synthesis of graphene using chemical vapor deposition (CVD) on metal substrates such as Ni and Cu. Recently, a method to synthesize ultra-large-scale (~30 inch) graphene films using roll-to-roll transfer and chemical doping processes was developed that shows excellent electrical and physical properties suitable for practical applications on a large scale. Considering the outstanding scalability/processibility of roll-to-roll and CVD methods as well as the extraordinary flexibility/conductivity of graphene films, we expect that transparent graphene electrodes can replace indium tin oxide in the near future.</P>
Large-Scale Graphene Production Techniques for Practical Applications
Sukang Bae,Seoung-Ki Lee,Min Park 한국진공학회(ASCT) 2018 Applied Science and Convergence Technology Vol.27 No.5
Many studies have been conducted on large-scale graphene synthesis by chemical vapor deposition. Furthermore, numerous researchers have attempted to develop processes that can continuously fabricate uniform and high-quality graphene. To compete with other types of carbon materials (carbon black, carbon fiber, carbon nanotubes, and so on), various factors, such as price, mass manufacturing capability, and quality, are crucial. Thus, in this study, we examine various large-scale graphene production methods focusing on cost competitiveness and productivity improvements for applications in various fields.
Roll-to-roll production of 30-inch graphene films for transparent electrodes
Bae, Sukang,Kim, Hyeongkeun,Lee, Youngbin,Xu, Xiangfan,Park, Jae-Sung,Zheng, Yi,Balakrishnan, Jayakumar,Lei, Tian,Ri Kim, Hye,Song, Young Il,Kim, Young-Jin,Kim, Kwang S.,Ö,zyilmaz, Barbaros,Ahn, J Springer Science and Business Media LLC 2010 Nature nanotechnology Vol.5 No.8
양방향 연결리스트를 이용한 세대별 쓰레기 수집 알고리즘
배수강(Sukang Bae),이승룡(Sungyoung Lee) 한국정보과학회 1999 한국정보과학회 학술발표논문집 Vol.26 No.1A
복사형 쓰레기 수집은 기존의 알고리즘에 비해 메모리의 단편화, 지역성의 문제 등을 개선하는 것으로 알려져 있으나 살아 있는 모든 객체를 힙의 다른 한 쪽 영역으로 복사하기 때문에 이에 대한 비용이 많이 든다. 이에 반하여 세대별 쓰레기 수집 방법은 일정 횟수만큼 수집 작업을 통하여 살아남은 객체는 다음 번 수집 작업에서도 살아남을 가능성이 크기 때문에 이를 다음 세대로 옮겨 빈번한 수집 대상이 되지 않도록 하는 정책을 취하므로 복사 방법에 비하여 객체 복사에 드는 비용을 줄일 수 있다. 그러나 세대별 쓰레기 수집 방법도 기본적으로는 복사 방식을 이용하기 때문에 각 세대에 대하여 객체 복사에 드는 비용이 크며, 할당영역과 복사영역을 고정된 크기로 사용하기 때문에 메모리의 이용효율이 떨어진다. 따라서, 본 논문에서는 복사에 드는 시간을 줄이기 위하여 양방향 연결리스트를 이용하여 실질적인 객체 복사를 피할 수 있는 방법과, 객체 리스트와 자유 리스트로 나누어 메모리를 관리함으로써 메모리 효율성을 극대화할 수 있는 방법을 제안한다. 이같은 방법은 힙 메모리가 물리적인 메모리로 한정되어 있는 시스템에 적합한 특성을 지니고 있다. 모의실험 결과 제안한 방법은 기존의 세대별 쓰레기 수집 방법보다 총 쓰레기 수집 실행시간이 약 40% 정도 감소되었으며, 메모리 이용 효율성도 전체 힙 메모리를 넓힐 수 있었다.
Wafer-Scale Synthesis and Transfer of Graphene Films
Lee, Youngbin,Bae, Sukang,Jang, Houk,Jang, Sukjae,Zhu, Shou-En,Sim, Sung Hyun,Song, Young Il,Hong, Byung Hee,Ahn, Jong-Hyun American Chemical Society 2010 NANO LETTERS Vol.10 No.2
<P>We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 ± 70 and 550 ± 50 cm<SUP>2</SUP>/(V s) at drain bias of −0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was ∼6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-2/nl903272n/production/images/medium/nl-2009-03272n_0005.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl903272n'>ACS Electronic Supporting Info</A></P>