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Emissions from Deep Levels in Hydrothermal Grown ZnO Substrates
Satoru Seto,Satoru Yamada,Kazuhiko Suzuki,Kenji Yoshino 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Undoped ZnO single-crystal substrates grown by using the hydrothermal method purchased from Tokyo Denpa Co. Ltd. (Japan) and SPC Goodwill Co. Ltd. (Russia) have been evaluated using low-temperature photoluminescence measurements. The broad deep emission bands in the two kinds of substrates can be decomposed into two Gaussian peaks: one located at 2.1 - 2.2 eV and the other at 2.4 - 2.5 eV, which are called the yellow band and the green band, respectively. the temperature dependence of the peak energy of the broad band could be explained by using the dierence between the temperature quenching rates of the green and the yellow bands.
MBE Growth of ZnSe Films on Lattice-Matched InxGa1-xAs Substrates
Takashi KARITA,Kazuhiko Suzuki,Takayuki SAWADA,Kazuaki IMAI,Satoru SETO 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
Raman scatering of ZnSe layers grown on nearly latice matched InxGa1-xAs substrates (x = 0 -0.092) by using molecular beam epitaxy (MBE) have ben investigated. The Raman shift of the ZnSe longitudinal optical (LO) phonon stays nearly constant while the line width Γ increases with increasing indium molar fraction of the substrates. The results are analyzed based on the two-parameter spatial corelation model. The intrinsic line width of ZnSe LO is found to depend strongly on the spatial corelation length of the substrate.