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RISS 인기검색어
- 검색키워드
- 저자 : Santosh M. Bobade (검색결과 3 건)
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김명호,정재훈,Santosh M. Bobade,최덕균,김영배,신지훈 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
In high-resolution displays, such as liquid crystal displays and organic light emitting diode displays, pixel-to-pixel uniformity in the panel is one of the most important requirements. In this study, a 120 × 320 thin-film transistor (TFT) array was fabricated on three-inch glass substrates by using Ni-induced, field-aided lateral crystallization (FALC) to improve the crystallization uniformity of a-Si below 500 ˚C. Two specially-designed common electrodes connecting the sources and the drains of the transistors in the array enabled application of a uniform electric field to the individual transistors during the FALC process. Thermal annealing at 500 ˚C for 4 hours completely crystallized the 20-μm-long channels of the TFTs. The degree of crystallization and the electrical properties of the TFTs were very uniform with a deviation of less than a few percent, which indicates that the proposed common electrode design and the FALC process can be used in applications. In high-resolution displays, such as liquid crystal displays and organic light emitting diode displays, pixel-to-pixel uniformity in the panel is one of the most important requirements. In this study, a 120 × 320 thin-film transistor (TFT) array was fabricated on three-inch glass substrates by using Ni-induced, field-aided lateral crystallization (FALC) to improve the crystallization uniformity of a-Si below 500 ˚C. Two specially-designed common electrodes connecting the sources and the drains of the transistors in the array enabled application of a uniform electric field to the individual transistors during the FALC process. Thermal annealing at 500 ˚C for 4 hours completely crystallized the 20-μm-long channels of the TFTs. The degree of crystallization and the electrical properties of the TFTs were very uniform with a deviation of less than a few percent, which indicates that the proposed common electrode design and the FALC process can be used in applications.
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Raj Kamal,Piyush Chandravanshi,최덕균,Santosh M. Bobade 한국물리학회 2015 Current Applied Physics Vol.15 No.5
In this investigation, the carrier concentration gradient between channel and contact region is achieved to improve the Thin film Transistors (TFT) performance by employing annealing at 350 ℃ in forming gas (N2 + 5% H2). The contact region is covered with Mo metal and the channel region is only exposed to forming gas to facilitate the diffusion controlled reaction. The TFT using a-IGZO active layer is fabricated in ambient of Ar:O2 in ratio 60:40 and the conductivity of the order of 10-3 S/cm is measured for asdeposited sample. The electrical conductivity of an annealed sample is of the order of 102 S/cm. The device performance is determined by measuring merit factors of TFT. The saturation mobility of magnitude 18.5 cm2V-1 s-1 has been determined for W/L (20/10) device at 15 V drain bias. The extrapolated field effect mobility for a device with channel width (W) 10 mm is 19.3 cm2V-1 s-1. The on/ off current ratio is 109 and threshold voltage is in the range between 2 and 3 V. The role of annealing on the electronic property of a-IGZO is carried out using X-ray photoelectron spectroscopy (XPS). The valance band cut-off has been approximately shifted to higher binding energy by 1 eV relative to asdeposited sample.
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Cho, Young-Je,Kim, HyunHo,Park, Kyoung-Yun,Lee, Jaegab,Bobade, Santosh M,Wu, Fu-Chung,Choi, Duck-Kyun American Scientific Publishers 2011 Journal of Nanoscience and Nanotechnology Vol.11 No.1
<P>Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which employs a cost-efficient micro-contact printing method instead of the conventional lithography process. After a-IGZO film deposition on the surface of a SiO2-layered Si wafer, the wafer was illuminated with UV light; sources and drains were then patterned using n-octadecyltrichlorosilane (OTS) molecules by a printing method. Due to the low surface energy of OTS, cobalt was selectively deposited on the OTS-free a-IGZO surface. The selective deposition of cobalt electrodes was successful, as confirmed by an optical microscope. The a-IZGO TFT fabricated using the SAM process exhibited good transistor performance: electric field mobility (micro(FE)), threshold voltage (V(th)), subthreshold slope (SS) and on/off ratio were 2.1 cm2/Vs, 2.4 V, 0.35 V/dec and 2.9 x 10(6), respectively.</P>
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