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Raj Kamal,Piyush Chandravanshi,최덕균,Santosh M. Bobade 한국물리학회 2015 Current Applied Physics Vol.15 No.5
In this investigation, the carrier concentration gradient between channel and contact region is achieved to improve the Thin film Transistors (TFT) performance by employing annealing at 350 ℃ in forming gas (N2 + 5% H2). The contact region is covered with Mo metal and the channel region is only exposed to forming gas to facilitate the diffusion controlled reaction. The TFT using a-IGZO active layer is fabricated in ambient of Ar:O2 in ratio 60:40 and the conductivity of the order of 10-3 S/cm is measured for asdeposited sample. The electrical conductivity of an annealed sample is of the order of 102 S/cm. The device performance is determined by measuring merit factors of TFT. The saturation mobility of magnitude 18.5 cm2V-1 s-1 has been determined for W/L (20/10) device at 15 V drain bias. The extrapolated field effect mobility for a device with channel width (W) 10 mm is 19.3 cm2V-1 s-1. The on/ off current ratio is 109 and threshold voltage is in the range between 2 and 3 V. The role of annealing on the electronic property of a-IGZO is carried out using X-ray photoelectron spectroscopy (XPS). The valance band cut-off has been approximately shifted to higher binding energy by 1 eV relative to asdeposited sample.
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