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Sangwon Lee,Sungwook Park,Sungchul Kim,Yongwoo Jeon,Kichan Jeon,Jun-Hyun Park,Jaechul Park,Ihun Song,Chang Jung Kim,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim IEEE 2010 IEEE electron device letters Vol.31 No.3
<P>An extraction technique for subgap density of states (DOS) in an n-channel amorphous InGaZnO thin-film transistor (TFT) by using multifrequency capacitance-voltage (<I>C</I> -<I>V</I>) characteristics is proposed and verified by comparing the measured <I>I</I>- <I>V</I> characteristics with the technology computer-aided design simulation results incorporating the extracted DOS as parameters. It takes on the superposition of exponential tail states and exponential deep states with characteristic parameters for <I>N</I> <SUB>TA</SUB> = 1.1 × 10<SUP>17</SUP> cm<SUP>-3</SUP> · eV<SUP>-1</SUP>, <I>N</I> <SUB>DA</SUB> = 4 × 10<SUP>15</SUP> cm<SUP>-3</SUP> · eV<SUP>-1</SUP>, <I>kT</I> <SUB>TA</SUB> = 0.09 eV, and <I>kT</I> <SUB>DA</SUB> = 0.4 eV. The proposed technique allows obtaining the frequency-independent <I>C</I>-<I>V</I> curve, which is very useful for oxide semiconductor TFT modeling and characterization, and considers the nonlinear relation between the energy level of DOS and the gate voltage <I>V</I> <SUB>GS</SUB>. In addition, it is a simple, fast, and accurate extraction method for DOS in amorphous InGaZnO TFTs without optical illumination, temperature dependence, and numerical iteration.</P>
Sangwon Suh(서상원),Mijeong Byun(변미정),Young-Sin Kim(김영신),Myung-Jick Kim(김명직),Seong-Bok Choi(최성복),Yeoung-Gyu Ko(고응규),Dong-Hun Kim(김동훈),Hyun-Tae Lim(임현태),Jae-Hwan Kim(김재환) 한국생명과학회 2012 생명과학회지 Vol.22 No.11
본 연구는 30개의 MS 마커를 이용하여 한국재래염소 3개 집단(당진, 장수, 통영)과 1개 농가집단을 대상으로 집단 내 및 집단간의 유전적 다양성, 계통유전학적 유연관계 분석 및 한국재래염소 3개 집단간의 유전적 균일성을 검증하여 우리 고유유전자원으로서의 가치를 구명하고자 실시하였다. 대립유전자형 분석 결과, 총 277개의 대립유전자형 중 집단-특이 대립유전자형은 102개(36.8%)였으며, 다형성지수인 이형접합도의 관측치(HO)는 0.416~0.651, 다형정보량(PIC)은 0.462~0.679로 산출되었다. Nei의 DA유전거리를 토대로 개체별 NJ 계통수를 작성한 결과 집단별로 독립적인 그룹을 형성하였는데, 한국재래염소 3개 집단 간의 유전거리에 비해 한국재래염소 집단과 농가 집단 간의 유전거리는 2배 이상을 보였다. 한국재래염소 집단의 실제적인 분류 및 분류된 군락의 균일도를 STRUCTURE software를 이용하여 분석한 결과, 실제 공시한 집단 수와 동일한 3개의 군락으로 분류가 가능했고, 각 집단에 대한 균일도는 통영(84.1%), 장수(78.1%), 당진(69.9%)의 결과를 나타냈다. 본 연구를 통하여 한국재래염소 집단의 유전적 다양성, 유연관계 및 유전적 균일성을 확인하였다. 본 연구에서 확인된 한국재래염소의 유전적 특성은 우리 고유자원에 대한 과학적인 근거자료이며, 나아가 가축유전자원에 대한 국가수준의 보존, 평가 및 이용에 활용될 수 있을 것으로 사료된다. The level of genetic variation and relationships in three native Korean goat populations (Dangjin, Jangsu, and Tongyeong) as well as the populations of a farm were analyzed, based on 30 microsatellite markers. A total of 277 distinct alleles were observed across the four goat populations, and 102 (36.8%) of these alleles were unique to only one population. The mean observed heterozygosity and polymorphism information content were calculated as 0.461~0.651 and 0.462~0.679, respectively. In the NJ tree constructed based on Nei’s DA genetic distance, the four populations represented four distinct groups. However, the genetic distances between each Korean native goat population and the farm population were two times those among the three native Korean breeds. The genetic structure within the three Korean native goat populations was also investigated. Cluster analysis, using the STRUCTURE software, suggested three clusters. The molecular information of genetic diversity and relationships in this study will be useful for the evaluation, conservation, and utilization of native Korean goat breeds as genetic resources.
Eunju Kim,Yoo-Sun Kim,Kyung-Mi Kim,Sangwon Jung,Sang-Ho Yoo,Yuri Kim 한국영양학회 2016 Nutrition Research and Practice Vol.10 No.1
BACKGROUND/OBJECTIVES: Type 2 diabetes (T2D) is more frequently diagnosed and is characterized by hyperglycemia and insulin resistance. D-Xylose, a sucrase inhibitor, may be useful as a functional sugar complement to inhibit increases in blood glucose levels. The objective of this study was to investigate the anti-diabetic effects of D-xylose both in vitro and stretpozotocin (STZ)-nicotinamide (NA)-induced models in vivo. MATERIALS/METHODS: Wistar rats were divided into the following groups: (i) normal control; (ii) diabetic control; (iii) diabetic rats supplemented with a diet where 5% of the total sucrose content in the diet was replaced with D-xylose; and (iv) diabetic rats supplemented with a diet where 10% of the total sucrose content in the diet was replaced with D-xylose. These groups were maintained for two weeks. The effects of D-xylose on blood glucose levels were examined using oral glucose tolerance test, insulin secretion assays, histology of liver and pancreas tissues, and analysis of phosphoenolpyruvate carboxylase (PEPCK) expression in liver tissues of a STZ-NA-induced experimental rat model. Levels of glucose uptake and insulin secretion by differentiated C2C12 muscle cells and INS-1 pancreatic β-cells were analyzed. RESULTS: In vivo, D-xylose supplementation significantly reduced fasting serum glucose levels (P < 0.05), it slightly reduced the area under the glucose curve, and increased insulin levels compared to the diabetic controls. D-Xylose supplementation enhanced the regeneration of pancreas tissue and improved the arrangement of hepatocytes compared to the diabetic controls. Lower levels of PEPCK were detected in the liver tissues of D-xylose-supplemented rats (P < 0.05). In vitro, both 2-NBDG uptake by C2C12 cells and insulin secretion by INS-1 cells were increased with D-xylose supplementation in a dose-dependent manner compared to treatment with glucose alone. CONCLUSIONS: In this study, D-xylose exerted anti-diabetic effects in vivo by regulating blood glucose levels via regeneration of damaged pancreas and liver tissues and regulation of PEPCK, a key rate-limiting enzyme in the process of gluconeogenesis. In vitro, D-xylose induced the uptake of glucose by muscle cells and the secretion of insulin cells by β-cells. These mechanistic insights will facilitate the development of highly effective strategy for T2D.
Jun-Hyun Park,Sangwon Lee,Kichan Jeon,Sunil Kim,Sangwook Kim,Jaechul Park,Ihun Song,Chang Jung Kim,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim IEEE 2009 IEEE electron device letters Vol.30 No.10
<P>The density of states (DOS)-based DC <I>I</I>-<I>V</I> model of an amorphous gallium-indium-zinc oxide (<I>a</I>-GIZO) thin-film transistor (TFT) is proposed and demonstrated with self-consistent methodologies for extracting parameters. By combining the optical charge-pumping technique and the nonlinear relation between the surface potential (phi<I>S</I>) and gate voltage (<I>V</I> <SUB>GS</SUB>), it is verified that the proposed DC model reproduces well both the measured <I>V</I> <SUB>GS</SUB>-dependent mobility and the <I>I</I> <SUB>DS</SUB>-<I>V</I> <SUB>GS</SUB> characteristics. Finally, the extracted DOS parameters are <I>N</I> <SUB>TA</SUB> = 4.4 times 10<SUP>17</SUP> cm<SUP>-3</SUP> middot eV<SUP>-1</SUP>, <I>N</I> <SUB>DA</SUB> = 3 times 10<SUP>15</SUP> cm<SUP>-3</SUP> middot eV<SUP>-1</SUP>, <I>kT</I> <SUB>TA</SUB> = 0.023 eV, <I>kT</I> <SUB>DGA</SUB> = 1.5 eV, and <I>EO</I> = 1.8 eV, with the formulas of exponential tail states and Gaussian deep states.</P>
Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS)
Yong Woo Jeon,Sungchul Kim,Sangwon Lee,Dong Myong Kim,Dae Hwan Kim,Jaechul Park,Chang Jung Kim,Ihun Song,Youngsoo Park,U-In Chung,Je-Hun Lee,Byung Du Ahn,Sei Yong Park,Jun-Hyun Park,Joo Han Kim IEEE 2010 IEEE transactions on electron devices Vol.57 No.11
<P>The amorphous oxide thin-film transistor (TFT)-oriented simulator [subgap Density of states (DOS)-based Amorphous Oxide TFT Simulator (DeAOTS)] is proposed, implemented, and demonstrated for amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs. It only consists of parameters having their physical meanings and is supplied with concrete techniques for parameter extraction. Among the physical parameters, the acceptor-like DOS <I>gA</I>(<I>E</I>) was experimentally extracted using the multifrequency <I>C</I>-<I>V</I> technique, whereas the donor-like DOS <I>gD</I>(<I>E</I>) and the doping concentration <I>ND</I> were extracted using numerical iterations. The simulation result reproduces the DOS and thin-film-thickness-dependence of dc <I>I</I>-<I>V</I> characteristics very well. Compared with the previously reported a-Si TFT models, the proposed DeAOTS model not only reflects the strong <I>V</I><SUB>GS</SUB> dependence of the effective mobility (μ<SUB>eff</SUB>) but also clarifies the relations between process-controlled DOS parameters and dc <I>I</I>- <I>V</I> characteristics based on experimentally extracted DOS parameters. Also, it sufficiently takes into account the peculiar situation of amorphous oxide TFTs where the free-carrier charge can be larger than the localized one out of the total induced charge. Moreover, it reproduces the measured electrical characteristics within the wide range of <I>V</I><SUB>GS</SUB>/<I>V</I><SUB>DS</SUB> with a single equation, not distinguishing the operation regions such as the subthreshold, linear, and saturation regimes.</P>
Park, Jun-Hyun,Jeon, Kichan,Lee, Sangwon,Kim, Sangwook,Kim, Sunil,Song, Ihun,Park, Jaechul,Park, Youngsoo,Kim, Chang Jung,Kim, Dong Myong,Kim, Dae Hwan The Electrochemical Society 2010 Journal of the Electrochemical Society Vol.157 No.3
<P>The self-consistent technique for extracting density of states [DOS: [Formula]] in an amorphous indium gallium zinc oxide (a-IGZO) thin film transistor is proposed and demonstrated. The key parameters are the [Formula] of the a-IGZO active layer and the intrinsic channel mobility [Formula]. While the energy level [Formula] is scanned by the photon energy and gate-to-source voltage [Formula] sweep, its density is extracted from an optical response of capacitance–voltage characteristics. Using the [Formula]-dependent [Formula] as another boundary condition, a linearly mapped DOS assuming a linear relation between [Formula] and [Formula] is translated into a final DOS by fully considering a nonlinear relation between [Formula] and [Formula]. The final DOS is finally extracted and verified by finding the self-consistent solution satisfying both the linearly mapped DOS and the measured [Formula] dependence of [Formula] with the numerical iteration of a DOS-based [Formula] model. The extracted final DOS parameters are [Formula], [Formula], [Formula], [Formula], and [Formula] with the formula of exponential tail states and Gaussian deep states.</P>